HCTS109T Datasheet, PDF (3/3 Pages) Intersil Corporation – Radiation Hardened Dual JK Flip Flop

Die Characteristics
DIE DIMENSIONS:
2261µm x 2235µm x 533µm ±51µm)
89 x 88 x 21mils ±2mil
METALLIZATION:
Type: Al Si
Thickness: 11kÅ 1kÅ
SUBSTRATE POTENTIAL:
Unbiased Silicon on Sapphire
BACKSIDE FINISH:
Sapphire
Metallization Mask Layout
K1 (3)
HCTS109T
PASSIVATION:
Type: Silox (S_iO₂)
Thickness: 13kÅ ±2.6kÅ
WORST CASE CURRENT DENSITY:
< 2.0e5 A/cm²
TRANSISTOR COUNT:
268
PROCESS:
CMOS SOS
HCTS109T
J1
R1
V_CC
(2)
(1)
(16)
(15) R2
CP1 (4)
S1 (5)
Q1 (6)
(14) J2
(13) K2
(12) CP2
Q1 (7)
(11) S2
(8)
GND
(9)
(10)
Q2
Q2
NOTE: The die diagram is a generic plot form a similar HCS device. It is intended to indicate approximate die size and bond pad location. The mask
series for the HCTS109 is TA14440A.
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