HCS138T Datasheet, PDF (3/3 Pages) Intersil Corporation – Radiation Hardened Inverting 3-to-8 Line Decoder/Demultiplexer

Die Characteristics
DIE DIMENSIONS:
(2159µm x 2565µm x 533µm ±51µm)
85 x 101 x 21mils ±2mil
METALLIZATION:
Type: Al Si
Thickness: 11.0kÅ ±1kÅ
SUBSTRATE POTENTIAL:
Unbiased Silicon on Sapphire
BACKSIDE FINISH:
Sapphire
Metallization Mask Layout
HCS138T
PASSIVATION:
Type: Silox (S_iO₂)
Thickness: 13.0kÅ ±2.6kÅ
WORST CASE CURRENT DENSITY:
< 2.0e5 A/cm²
TRANSISTOR COUNT:
264
PROCESS:
CMOS SOS
HCS138T
A1
A0
V_CC
Y0
(2)
(1)
(16)
(15)
A2 (3)
NC
E1 (4)
E2 (5)
E3 (6)
NC
(14) Y1
NC
(13) Y2
(12) Y3
(11) Y4
NC
(7)
(8)
(9)
(10)
Y7
GND
Y6
Y5
NOTE: The die diagram is a generic plot from a similar HCS device. It is intended to indicate approximate die size and bond pad location. The
mask series for the HCS138 is TA14361A.
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