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FSYA150D Datasheet, PDF (3/8 Pages) Intersil Corporation – Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs
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FSYA150D, FSYA150R
Source to Drain Diode Specifications
PARAMETER
Forward Voltage
Reverse Recovery Time
SYMBOL
VSD
trr
TEST CONDITIONS
ISD = 39A
ISD = 39A, dISD/dt = 100A/µs
MIN
TYP
MAX
UNITS
0.6
-
1.8
V
-
-
530
ns
Electrical Specifications up to 100K RAD TC = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
Drain to Source Breakdown Volts
(Note 3)
BVDSS VGS = 0, ID = 1mA
100
Gate to Source Threshold Volts
(Note 3)
VGS(TH) VGS = VDS, ID = 1mA
1.5
Gate to Body Leakage
(Notes 2, 3)
IGSS
VGS = ±20V, VDS = 0V
-
Zero Gate Leakage
(Note 3)
IDSS
VGS = 0, VDS = 80V
-
Drain to Source On-State Volts
(Notes 1, 3)
VDS(ON) VGS = 12V, ID = 39A
-
Drain to Source On Resistance
(Notes 1, 3)
rDS(ON)12 VGS = 12V, ID = 25A
-
NOTES:
1. Pulse test, 300µs Max.
2. Absolute value.
3. Insitu Gamma bias must be sampled for both VGS = 12V, VDS = 0V and VGS = 0V, VDS = 80% BVDSS.
MAX
-
4.0
100
25
2.34
0.055
UNITS
V
V
nA
µA
V
Ω
Single Event Effects (SEB, SEGR) Note 4
TEST
Single Event Effects Safe Operating Area
SYMBOL
SEESOA
ENVIRONMENT (NOTE 5)
ION
SPECIES
TYPICAL LET
(MeV/mg/cm)
TYPICAL
RANGE (µ)
Ni
26
43
APPLIED
VGS BIAS
(V)
-20
(NOTE 6)
MAXIMUM
VDS BIAS (V)
100
Br
37
36
-10
100
Br
37
36
-15
80
Br
37
36
-20
50
NOTES:
4. Testing conducted at Brookhaven National Labs; sponsored by Naval Surface Warfare Center (NSWC), Crane, IN.
5. Fluence = 1E5 ions/cm2 (typical), T = 25oC.
6. Does not exhibit Single Event Burnout (SEB) or Single Event Gate Rupture (SEGR).
Typical Performance Curves Unless Otherwise Specified
LET = 26MeV/mg/cm2, RANGE = 43µ
LET = 37MeV/mg/cm2, RANGE = 36µ
120
FLUENCE = 1E5 IONS/cm2 (TYPICAL)
100
80
60
40
20
TEMP = 25oC
0
0
-5
-10
-15
-20
-25
VGS (V)
FIGURE 1. SINGLE EVENT EFFECTS SAFE OPERATING AREA
1E-3
1E-4
1E-5
1E-6
ILM = 10A
30A
100A
300A
1E-7
10
30
100
300
DRAIN SUPPLY (V)
1000
FIGURE 2. DRAIN INDUCTANCE REQUIRED TO LIMIT
GAMMA DOT CURRENT TO IAS
4-3
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