FRS234D Datasheet, PDF (3/6 Pages) Intersil Corporation – 5A, 250V, 0.715 Ohm, Rad Hard, N-Channel Power MOSFETs

FRS234D, FRS234R, FRS234H
Post-Radiation Electrical Specifications TC = +25^oC, Unless Otherwise Specified
LIMITS
PARAMETER
SYMBOL
TYPE
TEST CONDITIONS
MIN
MAX
UNITS
Drain-Source
(Note 4, 6)
BVDSS FRS234D, R VGS = 0, ID = 1mA
250
-
V
Breakdown Volts
(Note 5, 6)
BVDSS FRS234H
VGS = 0, ID = 1mA
238
-
V
Gate-Source
(Note 4, 6)
VGS(th) FRS234D, R VGS = VDS, ID = 1mA
2.0
4.0
V
Threshold Volts
(Note 3, 5, 6) VGS(th) FRS234H
VGS = VDS, ID = 1mA
1.5
4.5
V
Gate-Body
(Note 4, 6)
IGSSF FRS234D, R VGS = 20V, VDS = 0
-
Leakage Forward
(Note 5, 6)
IGSSF FRS234H
VGS = 20V, VDS = 0
-
100
nA
200
nA
Gate-Body
(Note 2, 4, 6) IGSSR FRS234D, R VGS = -20V, VDS = 0
-
Leakage Reverse
(Note 2, 5, 6) IGSSR FRS234H
VGS = -20V, VDS = 0
-
100
nA
200
nA
Zero-Gate Voltage (Note 4, 6)
IDSS
FRS234D, R VGS = 0, VDS = 200V
-
Drain Current
(Note 5, 6)
IDSS
FRS234H
VGS = 0, VDS = 200V
-
25
µA
100
µA
Drain-Source
On-State Volts
(Note 1, 4, 6)
(Note 1, 5, 6)
VDS(on)
VDS(on)
FRS234D, R
FRS234H
VGS = 10V, ID = 5A
VGS = 16V, ID = 5A
-
3.75
V
-
5.63
V
Drain-Source
On Resistance
(Note 1, 4, 6)
(Note 1, 5, 6)
RDS(on)
RDS(on)
FRS234D, R VGS = 10V, ID = 3A
FRS234H
VGS = 14V, ID = 3A
-
0.715
Ω
-
1.073
Ω
NOTES:
1. Pulse test, 300µs max
2. Absolute value
3. Gamma = 300KRAD(Si)
4. Gamma = 10KRAD(Si) for “D”, 100KRAD(Si) for “R”. Neutron = 1E13
5. Gamma = 1000KRAD(Si). Neutron = 1E13
6. Insitu Gamma bias must be sampled for both VGS = +10V, VDS = 0V and VGS = 0V, VDS = 80% BVDSS
7. Gamma data taken 1/19/90 on TA 17633 devices by GE ASTRO SPACE; EMC/SURVIVABILITY LABORATORY; KING OF PRUSSIA,
PA 19401
8. Single event drain burnout testing by Titus, J.L., et al of NWSC, Crane, IN at Brookhaven Nat. Lab. Dec 11-14, 1989
9. Neutron derivation, Intersil Application note AN-8831, Oct. 1988
4-3