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RHRP30100 Datasheet, PDF (2/4 Pages) Intersil Corporation – 30A, 1000V Hyperfast Diode
RHRP30100
Electrical Specifications TC = 25oC, Unless Otherwise Specified
SYMBOL
TEST CONDITION
MIN
TYP
MAX
UNITS
VF
IF = 30A
IF = 30A, TC = 150oC
-
-
3.0
V
-
-
2.5
V
IR
VR = 1000V
VR = 1000V, TC = 150oC
-
-
250
µA
-
-
1.0
mA
trr
IF = 1A, dIF/dt = 100A/µs
-
-
65
ns
IF = 30A, dIF/dt = 100A/µs
-
-
75
ns
ta
IF = 30A, dIF/dt = 100A/µs
-
35
-
ns
tb
IF = 30A, dIF/dt = 100A/µs
-
33
-
ns
QRR
IF = 30A, dIF/dt = 100A/µs
-
200
-
nC
CJ
RθJC
VR = 10V, IF = 0A
-
100
-
pF
-
-
1.2
oC/W
DEFINITIONS
VF = Instantaneous forward voltage (pw = 300µs, D = 2%).
IR = Instantaneous reverse current.
trr = Reverse recovery time (Figure 9), summation of ta + tb.
ta = Time to reach peak reverse current (See Figure 9).
tb = Time from peak IRM to projected zero crossing of IRM based on a straight line from peak IRM through 25% of IRM (See Figure 9).
QRR = Reverse recovery charge.
CJ = Junction Capacitance.
RθJC = Thermal resistance junction to case.
pw = pulse width.
D = duty cycle.
Typical Performance Curves
300
100
100oC
175oC
10
25oC
1
0
1
2
3
4
5
6
VF, FORWARD VOLTAGE (V)
FIGURE 1. FORWARD CURRENT vs FORWARD VOLTAGE
1200
100
10
175oC
100oC
1
0.1
0.03
0
25oC
200
400
600
800
VR, REVERSE VOLTAGE (V)
1000
FIGURE 2. REVERSE CURRENT vs REVERSE VOLTAGE
2