RHRG50100 Datasheet, PDF (2/3 Pages) Intersil Corporation – 50A, 1000V Hyperfast Diode

RHRG50100
Electrical Specifications T_C = 25^oC, Unless Otherwise Specified
SYMBOL
TEST CONDITION
MIN
TYP
MAX
UNITS
V_F
I_F = 50A
I_F = 50A, T_C = 150^oC
-
-
3.0
V
-
-
2.5
V
I_R
V_R = 1000V
V_R = 1000V, T_C = 150^oC
-
-
250
µA
-
-
3.0
mA
t_rr
I_F = 1A, dI_F/dt = 100A/µs
-
-
75
ns
I_F = 50A, dI_F/dt = 100A/µs
-
-
95
ns
t_a
I_F = 50A, dI_F/dt = 100A/µs
-
54
-
ns
t_b
R_θJC
I_F = 50A, dI_F/dt = 100A/µs
-
32
-
ns
-
-
1.0
o_C/W
DEFINITIONS
V_F = Instantaneous forward voltage (pw = 300µs, D = 2%).
I_R = Instantaneous reverse current.
t_rr = Reverse recovery time (See Figure 6), summation of t_a + t_b.
t_a = Time to reach peak reverse current (See Figure 6).
t_b = Time from peak I_RM to projected zero crossing of I_RM based on a straight line from peak I_RM through 25% of I_RM (See Figure 6).
R_θJC = Thermal resistance junction to case.
pw = Pulse width.
D = Duty cycle.
Typical Performance Curves
150
100
175^oC
100^oC
10
25^oC
3000
1000
100
10
1
0.1
175^oC
100^oC
25^oC
1
0
0.5
1
1.5
2
2.5
3
3.5
V_F, FORWARD VOLTAGE (V)
FIGURE 1. FORWARD CURRENT vs FORWARD VOLTAGE
0.01
0
200
400
600
800
V_R, REVERSE VOLTAGE (V)
1000
FIGURE 2. REVERSE CURRENT vs REVERSE VOLTAGE
2