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RHRD4120 Datasheet, PDF (2/4 Pages) Intersil Corporation – 4A, 1200V Hyperfast Diodes
RHRD4120, RHRD4120S
Electrical Specifications TC = 25oC, Unless Otherwise Specified
SYMBOL
TEST CONDITION
MIN
TYP
MAX
UNITS
VF
IF = 4A
IF = 4A, TC = 150oC
-
-
3.2
V
-
-
2.6
V
IR
VR = 1200V
VR = 1200V, TC = 150oC
-
-
100
µA
-
-
500
µA
trr
IF = 1A, dIF/dt = 100A/µs
-
-
60
ns
IF = 4A, dIF/dt = 100A/µs
-
-
70
ns
ta
IF = 4A, dIF/dt = 100A/µs
-
40
-
ns
tb
IF = 4A, dIF/dt = 100A/µs
-
25
-
ns
QRR
IF = 4A, dIF/dt = 100A/µs
-
140
-
nC
CJ
RθJC
VR = 10V, IF = 0A
-
15
-
pF
-
-
3
oC/W
DEFINITIONS
VF = Instantaneous forward voltage (pw = 300µs, D = 2%).
IR = Instantaneous reverse current.
trr = Reverse recovery time (See Figure 8), summation of ta + tb.
ta = Time to reach peak reverse current (See Figure 8).
tb = Time from peak IRM to projected zero crossing of IRM based on a straight line from peak IRM through 25% of IRM (See Figure 8).
QRR = Reverse recovery charge.
CJ = Junction Capacitance.
RθJC = Thermal resistance junction to case.
pw = pulse width.
D = duty cycle.
Typical Performance Curves
20
175oC
10
100
175oC
10
100oC
25oC
1
0.5
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5
VF, FORWARD VOLTAGE (V)
FIGURE 1. FORWARD CURRENT vs FORWARD VOLTAGE
1
100oC
0.1
0.01
0.001
0
25oC
200
400
600
800
1000
VR, REVERSE VOLTAGE (V)
1200
FIGURE 2. REVERSE CURRENT vs REVERSE VOLTAGE
2