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RFP45N02L Datasheet, PDF (2/8 Pages) Intersil Corporation – 45A, 20V, 0.022 Ohm, N-Channel Logic Level Power MOSFETs
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RFP45N02L, RF1S45N02L, RF1S45N02LSM
Absolute Maximum Ratings TC = 25oC Unless Otherwise Specified
RFP45N02L, RF1S45N02L,
RF1S45N02LSM
UNITS
Drain to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS
20
V
Drain to Gate Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR
20
V
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS
±10
V
Drain Current
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
45
A
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
Refer to Peak Current Curve
Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .EAS
Refer to UIS Curve
Power Dissipation . . . .
Derate Above 25oC.
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.PD
...
90
0.606
W
W/oC
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TJ, TSTG
-55 to 175
oC
Soldering Temperature of Leads for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
260
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
Drain to Source Breakdown Voltage
Gate to Source Threshold Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Drain to Source On Resistance
Turn-On Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Time
Total Gate Charge
Gate Charge at 5V
Threshold Gate Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
BVDSS
VGS(TH)
IDSS
IGSS
rDS(ON)
tON
td(ON)
tr
td(OFF)
tf
tOFF
Qg(TOT)
Qg(5)
Qg(TH)
CISS
COSS
CRSS
RθJC
RθJA
ID = 250µA, VGS = 0V
VGS = VDS, ID = 250µA
VDS = 20V,
VGS = 0V
TC = 25oC
TC = 150oC
VGS = ±10V
ID = 45A, VGS = 5V
VDD = 15V, ID ≅ 45A,
RL = 0.33Ω, VGS = 5V,
RGS = 5Ω
VGS = 0V to 10V
VGS = 0V to 5V
VGS = 0V to 1V
VDD = 16V,
ID ≅ 45A,
RL = 0.35Ω
VDS = 15V, VGS = 0V,
f = 1MHz
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
Source to Drain Diode Voltage
Reverse Recovery Time
VSD
ISD = 45A
trr
ISD = 45A, dISD/dt = 100A/µs
MIN
TYP MAX UNITS
20
-
-
V
1
-
2
V
-
-
1
µA
-
-
50
µA
-
-
±100
nA
-
-
0.022
Ω
-
-
260
ns
-
15
-
ns
-
160
-
ns
-
20
-
ns
-
20
-
ns
-
-
60
ns
-
50
60
nC
-
30
36
nC
-
1.5
1.8
nC
-
1300
-
pF
-
724
-
pF
-
250
-
pF
-
-
1.65 oC/W
-
-
80
oC/W
MIN
TYP MAX UNITS
-
-
1.5
V
-
-
125
ns
2
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