RFP2N12 Datasheet, PDF (2/5 Pages) Intersil Corporation – 2A, 120V and 150V, 1.750 Ohm, N-Channel Power MOSFETs

RFP2N12, RFP2N15
Absolute Maximum Ratings T_C = 25^oC, Unless Otherwise Specified
RFP2N12
RFP2N15
UNITS
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_DS
Drain to Gate Voltage (R_GS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . V_DGR
Continuous Drain Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_D
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I_DM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_GS
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P_D
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . T_J, T_STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . .T_L
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . T_pkg
120
120
2
5
±20
25
0.2
-55 to 150
300
260
150
150
2
5
±20
25
0.2
-55 to 150
300
260
V
V
A
A
V
W
W/ ^oC
o_C
o_C
o_C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T_J = 25^oC to 125^oC.
Electrical Specifications T_C = 25^oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNITS
Drain to Source Breakdown Voltage
RFP2N12
BV_DSS I_D = 250µA, V_GS = 0V
120
-
-
V
RFP2N15
150
-
-
V
Gate Threshold Voltage
Zero-Gate Voltage Drain Current
Gate to Source Leakage Current
Drain to Source On Resistance (Note 2)
Drain to Source On Voltage
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse-Transfer Capacitance
Thermal Resistance Junction to Case
V_GS(TH) V_GS = V_DS, I_D = 250µA, (Figure 8)
2
I_DSS V_DS = Rated BV_DSS , V_GS = 0V
-
V0V_D,ST=C0=.81x25R_oaCted BV_DSS, V_GS =
-
I_GSS V_GS = ±20V, V_DS = 0V
-
r_DS(ON) I_D = 2A, V_GS = 10V(Figures 6, 7)
-
V_DS(ON) I_D = 2A, V_GS = 10V
-
t_d(ON) I_D ≈ 1A, V_DD = 75V, R_G = 50Ω,
-
t_r
R_L = 73Ω, V_GS = 10V
(Figures 10, 11, 12)
-
t_d(OFF)
-
t_f
-
C_ISS V_GS = 0V, V_DS = 25V
-
C_OSS ^{f = 1MHz, (Figure 9)}
-
C_RSS
-
R_θJC
-
-
4
V
-
1
µA
-
25
µA
-
±100 nA
-
1.750
Ω
-
3.5
V
17
25
ns
30
45
ns
30
45
ns
17
25
ns
-
200
pF
-
80
pF
-
25
pF
-
5
o_C/W
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
Source to Drain Diode Voltage (Note 2)
V_SD I_SD = -1A
Diode Reverse Recovery Time
t_rr
I_SD = 2A, dl_SD/dt = 50A/µs
NOTES:
2. Pulsed test: Pulse width ≤ 300µs duty cycle ≤ 2%.
3. Repetitive rating: pulse width limited by maximum junction temperature.
MIN TYP MAX UNITS
-
-
1.4
V
-
150
-
ns
5-2