RFP15N05L Datasheet, PDF (2/5 Pages) Fairchild Semiconductor – 15A, 50V and 60V, 0.140 Ohm, Logic Level N-Channel Power MOSFETs

RFP15N05L, RFP15N06L
Absolute Maximum Ratings T_C = 25^oC, Unless Otherwise Specified
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_DSS
Drain to Gate Voltage (R_GS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_DGR
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_D
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_DM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_GS
Maximum Power Dissipation . . . . . .
Above T_C = 25^oC, Derate Linearly
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P_D
...
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T_J, T_STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T_L
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T_pkg
RFP15N05L
50
50
15
40
±10
60
0.48
-55 to 150
RFP15N06L
60
60
15
40
±10
60
0.48
-55 to 150
UNITS
V
V
A
A
V
W
W/^oC
o_C
300
300
o_C
260
260
o_C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T_J = 25^oC to 125^oC.
Electrical Specifications T_C = 25^oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
Drain to Source Breakdown Voltage
RFP15N05L
BV_DSS I_D = 250µA, V_GS = 0V
RFP15N06L
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Drain to Source On Resistance (Note 2)
Input Capacitance
Output Capacitance
Reverse-Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
V_GS(TH)
I_DSS
I_GSS
r_DS(ON)
C_ISS
C_OSS
C_RSS
t_d(ON)
t_r
t_d(OFF)
t_f
R_θJC
V_GS = V_DS, I_D = 250µA (Figure 7)
V_DS = 48V, V_DS = 50V
V_DS = 48V, V_DS = 50V
TC = 125^oC
V_GS = ±10V, V_DS = 0V
I_D = 15A, V_GS = 5V (Figures 5, 6)
V_DS = 25V, V_GS = 0V, f = 1MHz
(Figure 8)
V_DD = 30V, I_D = 7.5A, R_G = 6.25Ω
(Figures 10, 11)
V_GS = 5V
RFP15N05L, RFP15N06L
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
Source to Drain Diode Voltage (Note 2)
V_SD
I_SD = 7.5A
Diode Reverse Recovery Time
t_rr
I_SD = 4A, dI_SD/dt = 100A/µs
NOTE:
2. Pulsed: pulse duration = ≤ 300µs maximum, duty cycle = ≤ 2%.
3. Repititive rating: pulse width limited by maximum junction temperature.
6-230
MIN TYP MAX UNITS
50
-
-
V
60
-
-
V
1
-
2
V
-
-
1
µA
-
-
50
µA
-
-
100
nA
-
-
0.140
Ω
-
-
900
pF
-
-
450
pF
-
-
200
pF
-
16
40
ns
-
250 325
ns
-
200 325
ns
-
225 325
ns
-
-
2.083 ^oC/W
MIN TYP MAX UNITS
-
-
1.4
V
-
225
-
ns