RFM7N35 Datasheet, PDF (2/4 Pages) Intersil Corporation – 7A, 350V and 400V, 0.75 Ohm, N-Channel Power MOSFETs

RFM7N35, RFM7N40, RFP7N35, RFP7N40
Absolute Maximum Ratings T_C = 25^oC, Unless Otherwise Specified
RFM7N35
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_DSS
350
Drain to Gate Voltage (R_GS = 1MΩ) (Note 1). . . . . . . . . . . . . . . . . . . V_DGR
350
Continuous Drain Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_D
7
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_DM
15
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_GS
±20
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P_D
100
Linear Derating Factor (Above 25^oC) . . . . . . . . . . . . . . . . . . . . . . . . . . . .
0.8
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . T_J, T_STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . T_L
Package Body for 10s, See Techbrief 334 (for TO-220) . . . . . . . . . . T_pkg
-55 to 150
300
260
RFM7N40
400
400
7
15
±20
100
0.8
-55 to 150
300
260
RFP7N35
350
350
7
15
±20
75
0.6
-55 to 150
300
260
RFP7N40
400
400
7
15
±20
75
0.6
-55 to 150
300
260
UNITS
V
V
A
A
V
W
W/^oC
o_C
o_C
o_C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T_J = 25^oC to 125^oC.
Electrical Specifications T_C = 25^oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNITS
Drain to Source Breakdown Voltage
RFM7N35, RFP7N35
BV_DSS
I_D = 250µA, V_GS = 0V
350
-
-
V
RFM7N40, RFP7N40
400
-
-
V
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Drain to Source On Resistance (Note 2)
Drain to Source On Voltage (Note 2)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse-Transfer Capacitance
Thermal Resistance Junction to Case
V_GS(TH) V_GS = V_DS, I_D = 250µA (Figure 8)
2
I_DSS
V_DS = Rated BV_DSS, T_C = 25^oC
-
V_DS = 0.8 x Rated BV_DSS, T_C = 125^oC -
I_GSS
V_GS = ±20V, V_DS = 0V
-
r_DS(ON) I_D = 7A, V_GS = 10V (Figures 6, 7)
-
V_DS(ON) I_D = 7A, V_GS = 10V
-
t_d(ON)
V_DS = 200V, I_D ≈ 3.5A, R_G = 50Ω,
-
t_r
R_L = 56Ω, V_GS = 10V
(Figures 10, 11, 12)
-
t_d(OFF)
-
t_f
-
C_ISS
V_DS = 25V, V_GS = 0V, f = 1MHz
-
(Figure 9)
C_OSS
-
C_RSS
-
R_θJC
RFM7N35, RFM7N40
-
RFP7N35, RFP7N40
-
-
4
V
-
1
µA
-
25
µA
-
±100 nA
-
0.75
Ω
-
5.25
V
16
45
ns
54
75
ns
170 250
ns
62
100
ns
-
1600 pF
-
300
pF
-
200
pF
-
1.25 ^oC/W
-
1.67 ^oC/W
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
Source to Drain Diode Voltage (Note 2)
V_SD
I_SD = 7A
Reverse Recovery Time
t_rr
I_SD = 7A, dI_SD/dt = 100A/µs
NOTES:
2. Pulse Test: Pulse Width ≤ 300µs, duty cycle ≤ 2%.
3. Repetitive rating: pulse width limited by maximum junction temperature.
MIN TYP MAX UNITS
-
-
1.4
V
-
870
-
ns
5-2