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| RFL2N06L Datasheet, PDF (2/5 Pages) Intersil Corporation – 2A, 60V, 0.950 Ohm, Logic Level, N-Channel Power MOSFET | |||
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RFL2N06L
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Speciï¬ed
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDS
Drain to Gate Voltage (RGS = 20Kâ¦) (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGS
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Above TC = 25oC, Derate Linearly . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
RFL2N06L
50
60
2
10
±10
8.33
0.0667
-55 to 150
300
UNITS
V
V
A
A
V
W
W/oC
oC
oC
CAUTION: Stresses above those listed in âAbsolute Maximum Ratingsâ may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this speciï¬cation is not implied.
NOTE:
1. TJ = 25oC to 125oC.
Electrical Speciï¬cations TC = 25oC, Unless Otherwise Speciï¬ed
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNITS
Drain to Source Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Drain to Source On Voltage (Note 2)
Drain to Source On Resistance (Note 2)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
BVDSS ID = 250µA, VGS = 0V
60
VGS(TH) VGS = VDS, ID = 250µA, (Figure 8)
1
IDSS VDS = Rated BVDSS, VGS = 0V
-
VDS = 0.8 x Rated BVDSS, VGS = 0V, TC = 125oC
-
IGSS VGS = ±10V, VDS = 0V
-
VDS(ON) ID = 2A, VGS = 5V
-
rDS(ON) ID =2A, VGS = 5V, (Figures 6, 7)
td(ON) ID = 2A, VDD = 30V, RG = 6.25â¦, RL = 30â¦
-
tr
VGS = 5V, (Figures 10, 11, 12)
-
td(OFF)
-
tf
-
CISS VGS = 0V, VDS = 25V, f = 1MHz, (Figure 9)
-
COSS
-
-
-
V
-
2
V
-
1
µA
-
25
µA
- ±100 nA
-
1.9
V
- 0.950 â¦
10 20
ns
65 130 ns
20 40
ns
30 60
ns
-
225 pF
-
100 pF
Reverse Transfer Capacitance
Thermal Resistance Junction to Case
CRSS
RθJC
-
-
40
pF
-
-
15 oC/W
Source to Drain Diode Speciï¬cations
PARAMETER
SYMBOL
TEST CONDITIONS
Source to Drain Diode Voltage (Note 2)
VSD
ISD = 2A
Diode Reverse Recovery Time
trr
ISD = 2A, dISD/dt = 100A/µs
NOTES:
2. Pulse test: pulse width ⤠300µs, duty cycle ⤠2%.
3. Repetitive rating: pulse width limited by maximum junction temperature.
MIN TYP MAX UNITS
-
-
1.4
V
-
150
-
ns
2
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