RFL2N05 Datasheet, PDF (2/5 Pages) Intersil Corporation – 2A, 50V and 60V, 0.95 Ohm, N-Channel Power MOSFETs

RFL2N05, RFL2N06
Absolute Maximum Ratings T_C = 25^oC, Unless Otherwise Specified
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_DSS
Drain to Gate Voltage (R_GS = 1MΩ) (Note 1). . . . . . . . . . . . . . . . . . . . . . V_DGR
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_GS
Drain Current, RMS Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_D
Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I_DM
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P_D
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature Range . . . . . . . . . . . . . . . . . . . T_J, T_STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . .T_L
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . T_pkg
RFL2N05
50
50
±20
2
10
8.33
0.0667
-55 to 150
300
260
RLF2N06
60
60
±20
2
10
8.33
0.0667
-55 to 150
300
260
UNITS
V
V
V
A
A
W
W/ ^oC
o_C
o_C
o_C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of
the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T_J = 25^oC to 125^oC.
Electrical Specifications T_C = 25^oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
Drain to Source Breakdown Voltage
RFL2N05
BV_DSS I_D = 250µA, V_GS = 0
RFL2N06
Gate to Threshold Voltage
Zero-Gate Voltage Drain Current
Gate to Source Leakage Current
Drain to Source On Voltage (Note 2)
Drain to Source On Resistance (Note 2)
Forward Transconductance (Note 2)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse-Transfer Capacitance
Thermal Resistance Junction to Case
V_GS(TH) V_GS = V_DS, I_D = 250µA, (Figure 8)
I_DSS
VT_CDS==250o.8Cx Rated BV_DSS,
T_C = 125^oC
I_GSS V_GS = ±20V, V_DS = 0
V_DS(ON) I_D = 1A, V_GS = 10V
I_D = 2A, V_GS = 10V
I_D = 4A, V_GS = 15V
r_DS(ON) I_D = 1A, V_GS = 10V, (Figures 6, 7)
g_fs I_D = 1A, V_DS = 10V, (Figure 10)
t_d(ON)
t_r
I_D ≈ 1A, V_DD = 30V, R_GS = 50Ω,
V_GS = 10V, (Figures 11, 12, 13)
t_d(OFF)
t_f
C_ISS
C_OSS
V_GS = 0V, V_DS = 25V,
f = 1MHz, (Figure 9)
C_RSS
R_θJC
Source to Drain Diode Specifications
MIN TYP MAX UNITS
50
-
-
V
60
-
-
V
2
-
4
V
-
-
1
µA
-
-
25
µA
-
-
±100
nA
-
-
0.95
V
-
-
2.0
V
-
-
4.8
V
-
-
0.95
Ω
400
-
-
S
-
6
15
ns
-
14
30
ns
-
16
30
ns
-
30
50
ns
-
-
200
pF
-
-
85
pF
-
-
30
pF
-
-
15
o_C/W
PARAMETER
SYMBOL
TEST CONDITIONS
Source to Drain Diode Voltage (Note 2)
V_SD
Diode Reverse Recovery Time
t_rr
NOTE:
2. Pulse test: pulse width ≤ 300µs, duty cycle ≤ 2%.
I_SD = 1A
I_SD = 2A, dI_SD/dt = 50A/µs
MIN
TYP
MAX UNITS
-
-
1.4
V
-
100
-
ns
5-2