RFK70N06 Datasheet, PDF (2/8 Pages) Intersil Corporation – 70A, 60V, 0.014 Ohm, N-Channel Power MOSFET

RFK70N06
Absolute Maximum Ratings T_C = 25^oC Unless Otherwise Specified
Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_DSS
Drain to Gate Voltage (R_GS = 20kΩ ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_DGR
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_D
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_DM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_GS
Pulsed Avalanche Rating. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .E_AS
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P_D
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T_J, T_STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T_L
RFK70N06
60
60
70
Refer to Peak Current Curve
±20
Refer to UIS Curve
150
1.0
-55 to 175
260
UNITS
V
V
A
V
W
W/^oC
o_C
o_C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T_J = 25^oC to 150^oC.
Electrical Specifications T_C = 25^oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNITS
Drain to Source Breakdown Voltage
Gate to Source Threshold Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Drain to Source On Resistance (Note 2)
Turn-On Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Time
Total Gate Charge
Gate Charge at 10V
Threshold Gate Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
BV_DSS I_D = 250µA, V_GS = 0V
60
-
-
V
V_GS(TH) V_GS = V_DS, I_D = 250µA
2
-
4
V
I_DSS V_DS = Rated BV_DSS, V_GS = 0V
-
V_DS = 0.8 x Rated BV_DSS, V_GS = 0V, T_C = 150^oC
-
-
1
µA
-
25
µA
I_GSS V_GS = ±20V
-
- ±100 nA
r_DS(ON) I_D = 70A, V_GS = 10V (Figure 10)
-
- 0.014 Ω
t_ON
t_d(ON)
t_r
V_DD = 30V, I_D ≈ 70A, R_L = 0.43Ω,
V_GS = 10V, R_G = 2.5Ω
(Figures 14, 17, 18)
-
- 125 ns
-
12
-
ns
-
50
-
ns
t_d(OFF)
-
40
-
ns
t_f
-
15
-
ns
t_OFF
-
- 125 ns
Q_g(TOT)
Q_g(10)
Q_g(TH)
V_GS = 0V to 20V
V_GS = 0V to 10V
V_GS = 0V to 2V
V_DD = 48V, I_D ≈ 70A,
R_L = 0.68Ω,
I_G(REF) = 1.0mA
(Figures 19, 20)
-
185 215 nC
-
100 115 nC
-
5.5 6.5 nC
C_ISS
C_OSS
V_DS = 25V, V_GS = 0V, f = 1MHz
(Figure 13)
- 3000 -
pF
-
900
-
pF
C_RSS
R_θJC
R_θJA
-
300
-
pF
-
-
1.0 ^oC/W
-
-
80 ^oC/W
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNITS
Source to Drain Diode Voltage
V_SD I_SD = 70A
-
-
1.5
V
Reverse Recovery Time
t_rr
I_SD = 70A, dI_SD/dt = 100A/µs
-
-
125
ns
NOTES:
2. Pulse test: pulse width ≤ 300ms, duty cycle ≤ 2%.
3. Repetitive rating: pulse width is limited by maximum junction temperature. See Transient Thermal Temperature curve (Figure 3).
2