RFK25N18 Datasheet, PDF (2/5 Pages) Intersil Corporation – 25A, 180V and 200V, 0.150 Ohm, N-Channel Power MOSFETs

RFK25N18, RFK25N20
Absolute Maximum Ratings T_C = 25^oC, Unless Otherwise Specified
RFK25N18
RFK25N20
UNITS
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_DS
180
200
V
Drain to Gate Voltage (R_GS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . V_DGR
180
200
V
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_D
25
25
A
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_DM
60
60
A
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_GS
±20
±20
V
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P_D
150
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1.2
150
W
1.2
W/^oC
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . T_J, T_STG
-55 to 150
-55 to 150
o_C
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . T_L
260
260
o_C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T_J = 25^oC to 125^oC.
Electrical Specifications T_C = 25^oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
Drain to Source Breakdown Voltage
BV_DSS I_D = 250µA, V_GS = 0
RFK25N18
180
RFK25N20
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Drain to Source On Resistance (Note 2)
Drain to Source On Voltage (Note 2)
Turn On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Thermal Resistance Junction to Case
200
V_GS(TH) V_GS = V_DS, I_D = 250µA
2
I_DSS
V_DS = Rated BV_DSS, V_GS = 0V
-
V_DS = 0.8 x Rated BV_DSS, V_GS = 0V, T_C = 125^oC -
I_GSS V_GS = ±20V, V_DS = 0V
-
r_DS(ON) I_D = 25A, V_GS = 10V (Figures 6, 7)
-
V_DS(ON) I_D = 25A, V_GS = 10V
-
t_d(ON) I_D ≈ 12.5A, V_DD = 100V, R_G = 50 , V_GS = 10V
-
t_r
R_L = 8 ,
(Figures 10, 11, 12)
-
t_d(OFF)
-
t_f
-
C_ISS V_GS = 0V, V_DS = 25V
-
f = 1MHz
C_{OSS (Figure 9)}
-
C_RSS
-
R_θJC
-
Source to Drain Diode Specifications
TYP MAX UNITS
-
-
V
-
-
V
-
4
V
-
1
µA
-
25
µA
- ±100 nA
- 0.150 Ω
-
3.75
V
40
80
ns
150 225 ns
300 400 ns
120 200 ns
- 3500 pF
-
900 pF
-
400 pF
-
0.83 ^oC/W
PARAMETER
SYMBOL
TEST CONDITIONS
Source to Drain Diode Voltage (Note 2)
V_SD
I_SD = 12.5A
Diode Reverse Recovery Time
t_rr
I_SD = 4A, dI_SD/dt = 100A/µs
NOTES:
2. Pulse test: pulse width ≤ 300µs Duty Cycle ≤ 2%.
3. Repetitive rating: pulse width is limited by maximum junction temperature.
MIN TYP MAX UNITS
-
-
1.4
V
-
300
-
ns
2