RFH12N35 Datasheet, PDF (2/5 Pages) Intersil Corporation – 12A, 350V and 400V, 0.380 Ohm, N-Channel Power MOSFETs

RFH12N35, RFH12N40
Absolute Maximum Ratings T_C = 25^oC, Unless Otherwise Specified
RFH12N35
RFH12N40
UNITS
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_DS
350
400
V
Drain to Gate Voltage (R_GS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . .V_DGR
350
400
V
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_D
12
12
A
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_DM
24
24
A
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_GS
±20
±20
V
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P_D
150
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1.2
150
W
1.2
W/^oC
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T_J, T_STG
-55 to 150
-55 to 150
o_C
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . T_L
300
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T_pkg
260
300
o_C
260
o_C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T_J = 25^oC to 125^oC.
Electrical Specifications T_C = 25^oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
Drain to Source Breakdown Voltage
BV_DSS I_D = 250µA, V_GS = 0V
RFH12N35
350
RFH12N40
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Drain to Source On Resistance (Note 2)
Drain to Source On Voltage (Note 2)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse-Transfer Capacitance
Thermal Resistance Junction-to-Case
400
V_GS(TH) V_GS = V_DS, I_D = 250µA, (Figure 8)
2
I_DSS V_DS = Rated BV_DSS, V_GS = 0V
-
V_DS = 0.8 x Rated BV_DSS, V_GS = 0V, T_C = 125^oC -
I_GSS V_GS = ±20V, V_DS = 0V
-
r_DS(ON) I_D = 12A, V_GS = 10V, (Figures 6, 7)
-
V_DS(ON) I_D = 12A, V_GS = 10V
-
t_d(ON) I_D ≈ 6A, V_DD = 200V, R_G = 50Ω, V_GS = 10V,
-
t_r
R_L = 33Ω
(Figures 10, 11, 12)
-
t_d(OFF)
-
t_f
-
C_ISS V_GS = 0V, V_DS = 25V, f = 1MHz,
-
(Figure 9)
C_OSS
-
C_RSS
-
R_θJC RFH12N35, RFH12N40
-
Source to Drain Diode Specifications
TYP MAX UNITS
-
-
V
-
-
V
-
4
V
-
1
µA
-
25
µA
- ±100 nA
- 0.380 Ω
-
4.56
V
30
50
ns
105 150 ns
480 750 ns
140 200 ns
- 3000 pF
-
900 pF
-
400 pF
-
0.83 ^oC/W
PARAMETER
SYMBOL
TEST CONDITIONS
Source to Drain Diode Voltage (Note 2)
V_SD
I_SD = 6A
Diode Reverse Recovery Time
t_rr
I_SD = 4A, dI_SD/dt = 100A/µs
NOTES:
2. Pulse test: pulse width ≤ 300µs, duty cycle ≤ 2%.
3. Repetitive rating: pulse width is limited by maximum junction temperature.
MIN TYP MAX UNITS
-
-
1.4
V
-
950
-
ns
2