RFG50N05 Datasheet, PDF (2/6 Pages) Intersil Corporation – 50A, 50V, 0.022 Ohm, N-Channel Power MOSFETs

RFG50N05, RFP50N05
Absolute Maximum Ratings T_C = 25^oC, Unless Otherwise Specified
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_DSS
Drain to Gate Voltage (R_GS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . V_DGR
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I_D
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_DM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_GS
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P_D
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Single Pulse Avalanche Energy Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E_as
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . T_J, T_STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . T_L
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T_pkg
RFG50N05, RFP50N05
50
50
50
120
±20
132
0.88
Refer to UIS SOA Curve
-55 to 175
300
260
UNITS
V
V
A
A
V
W
W/ ^oC
o_C
o_C
o_C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T_J = 25^oC to 150^oC.
Electrical Specifications T_C = 25^oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
Drain to Source Breakdown Voltage
Gate Threshold Voltage
BV_DSS
V_GS(TH)
I_D = 0.250µA, V_GS = 0V (Figure 9)
V_DS = V_GS, I_D = 0.250µA (Figure 8)
Zero Gate Voltage Drain Current
Zero Gate Voltage Drain Current,
Gate to Source Leakage Current
Drain to Source On Resistance (Note 2)
Turn-On Time
Turn-On Delay Time
Rise Time
I_DSS
I_GSS
r_DS(ON)
t_(ON)
t_d(ON)
t_r
V_DS = Rated BV_DSS, V_GS = 0V
V_DS = 0.8 x Rated BV_DSS, V_GS = 0V, T_J = 150^oC
V_GS = ±20V
I_D = 50A, V_GS = 10V (Figure 7)
V_DD = 25V, I_D ≈ 25A, R_L = 1.0Ω,
R_GS = 6.67Ω, V_GS = 10V
(Figure 11)
Turn-Off Delay Time
Fall Time
t_d(OFF)
t_f
Turn-Off Time
Total Gate Charge
Gate Charge at 10V
Threshold Gate Charge
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
t_(OFF)
Q_g(tot)
Q_g(10)
Q_g(th)
R_θJC
R_θJA
V_GS = 0-20V
V_GS = 0-10V
V_GS = 0-2V
TO-220
TO-247
V_DD - 40V, I_D = 50A
R_L = 0.8Ω, I_G(REF) = 1.5mA
(Figure 11)
MIN TYP MAX UNITS
50
-
-
V
2.0
-
4.0
V
-
-
1
A
-
-
25
µA
-
- ±100 nA
-
- 0.022
Ω
-
-
100
ns
-
15
-
ns
-
55
-
ns
-
60
-
ns
-
15
-
ns
-
-
100
ns
-
-
160
nC
-
-
80
nC
-
-
6
nC
-
-
1.14 ^oC/W
-
-
62
o_C/W
30
o_C/W
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
Source to Drain Diode Voltage (Note 2)
V_SD I_SD = 50A
Diode Reverse Recovery Time
t_rr
I_SD = 50A, dl_SD/dt = 100A/µs
NOTES:
2. Pulsed test: pulse width ≤ 300µs duty cycle ≤ 2%.
3. Repetitive rating: pulse width is limited by maximum junction temperature.
MIN TYP MAX UNITS
-
1.5
V
-
125
ns
4-463