RFG45N06 Datasheet, PDF (2/8 Pages) Fairchild Semiconductor – 45A, 60V, Avalanche Rated N-Channel Enhancement-Mode Power MOSFETs

RFG45N06, RFP45N06, RF1S45N06SM
Absolute Maximum Ratings T_C = 25^oC, Unless Otherwise Specified
RFG45N06, RFP45N06
RF1S45N06SM
UNITS
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_DSS
Drain to Gate Voltage (R_G = 20KΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . V_DGR
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I_D
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_DM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_GS
Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E_AS
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P_D
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T_J, T_STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . T_L
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T_pkg
60
60
45
Refer to Peak Current Curve
±20
Refer to UIS Curve
131
0.877
-55 to 175
300
260
V
V
A
V
W
W/^oC
o_C
o_C
o_C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T_J = 25^oC to 150^oC.
Electrical Specifications T_C = 25^oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNITS
Drain to Source Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Drain Source On Resistance (Note 2)
Turn-On Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Time
Total Gate Charge
Gate Charge at 10V
Threshold Gate Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
BV_DSS I_D = 250µA, V_GS = 0V (Figure 11)
60
-
-
V
V_GS(TH) V_GS = V_DS, I_D = 250µA (Figure 10)
2
-
4
V
I_DSS V_DS = Rated BV_DSS, V_GS = 0V
-
V_DS = 0.8 x Rated BV_DSS, V_GS = 0V (125^oC)
-
-
1
µA
-
25
µA
I_GSS V_GS = ±20V
-
-
±100
nA
r_DS(ON) I_D = 45A, V_GS = 10V (Figure 9)
-
-
0.028
Ω
t_ON
t_d(ON)
t_r
V_DD = 30V, I_D = 45A
R_L = 0.667Ω, V_GS = +10V
R_G = 3.6Ω (Figure 13)
-
-
120
ns
-
12
-
ns
-
74
-
ns
t_d(OFF)
-
37
-
ns
t_f
-
16
-
ns
t_OFF
-
-
80
ns
Q_g(TOT)
Q_g(10)
Q_g(TH)
V_GS = 0 to 20V
V_GS = 0 to 10V
V_GS = 0 to 2V
V_DD = 48V, I_D = 45A,
R_L = 1.07Ω
I_g(REF) = 1.5mA
(Figure 13)
-
125 150
nC
-
67
80
nC
-
3.7
4.5
nC
C_ISS
C_OSS
V_DS = 25V, V_GS = 0V
f = 1MHz (Figure 12)
-
2050
-
pF
-
600
-
pF
C_RSS
R_θJC
R_θJA
-
200
-
pF
-
-
1.14 ^oC/W
-
-
80
o_C/W
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX UNITS
Source to Drain Diode Voltage
V_SD
I_SD = 45A
-
-
1.5
V
Diode Reverse Recovery Time
t_rr
I_SD = 45A, dI_SD/dt = 100A/µs
-
-
125
ns
NOTES:
2. Pulse test: pulse width ≤ 300µs, duty cycle ≤ 2%.
3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3) and Peak Current
Capability Curve (Figure 5).
4-456