RFD16N05 Datasheet, PDF (2/8 Pages) Fairchild Semiconductor – 16A, 50V, 0.047 Ohm, N-Channel Power MOSFETs

RFD16N05, RFD16N05SM
Absolute Maximum Ratings T_C = 25^oC, Unless Otherwise Specified
RFD16N05, RFD16N05SM,
UNITS
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_DSS
50
V
Drain to Gate Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_DGR
50
V
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_D
16
A
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_DM
Refer to Peak Current Curve
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_GS
± 20
V
Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .E_AS
Refer to Figure 5
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P_D
Derate above 25^oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
72
W
0.48
W/^oC
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T_J, T_STG
-55 to 175
o_C
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T_L
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T_pkg
300
260
o_C
o_C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T_J = 25^oC to 150^oC.
Electrical Specifications T_C = 25^oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
Drain to Source Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Drain to Source On Resistance (Note 2)
Turn-On Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Time
Total Gate Charge
Gate Charge at 10V
Threshold Gate Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
BV_DSS I_D = 250µA, V_GS = 0V (Figure 11)
V_GS(TH) V_GS = V_DS, I_D = 250µA
I_DSS V_DS = Rated BV_DSS, V_GS = 0V
VT_{CDS==1500.8oCx} Rated BV_DSS, V_GS = 0V,
I_GSS V_GS = ±20V
r_DS(ON) I_D = 16A, V_GS = 10V (Figure 9)
t_(ON)
t_d(ON)
t_r
V_DD = 25V, I_D = 8A, R_L = 3.125Ω,
V_GS = 10V, R_GS = 25Ω
(Figure 13)
t_d(OFF)
t_f
t_(OFF)
Q_g(TOT)
Q_g(10)
Q_(TH)
V_GS = 0V to 20V
V_GS = 0V to 10V
V_GS = 0V to 2V
V_DD = 40V, I_D ≈ 16A,
R_L = 2.5Ω
I_g(REF) = 0.8mA
(Figure 13)
C_ISS
C_OSS
V_DS = 25V, V_GS = 0V, f = 1MHz
(Figure 12)
C_RSS
R_θJC
R_θJA TO-251 and TO-252
MIN TYP MAX UNITS
50
-
-
V
2
-
4
V
-
-
1
µA
-
-
25
µA
-
-
±100 nA
-
-
0.047 Ω
-
-
65
ns
-
14
-
ns
-
30
-
ns
-
55
-
ns
-
30
-
ns
-
-
125
ns
-
-
80
nC
-
-
45
nC
-
-
2.2
nC
-
900
-
pF
-
325
-
pF
-
100
-
pF
-
-
2.083 ^oC/W
-
-
100 ^oC/W
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP MAX UNITS
Source to Drain Diode Voltage
V_SD I_SD = 16A
-
-
1.5
V
Diode Reverse Recovery Time
t_rr
I_SD = 16A, dI_SD/dt = 100A/µs
-
-
125
ns
NOTES:
2. Pulse test: pulse width ≤ 250µs, duty cycle ≤ 2%.
3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3) and Peak Current
Capability Curve (Figure 5).
4-421