RFD15N06LE Datasheet, PDF (2/8 Pages) Intersil Corporation – 15A, 60V, 0.065 Ohm, ESD Rated, Logic Level, N-Channel Power MOSFETs

RFD15N06LE, RFD15N06LESM
Absolute Maximum Ratings T_C = 25^oC, Unless Otherwise Specified
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_DSS
Drain to Gate Voltage (R_GS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . V_DGR
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_GS
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_D
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_DM
Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .E_AS
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P_D
Derate above 25^oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T_J, T_STG
Electrostatic Discharge Rating MIL-STD-883, Category B(2) . . . . . . . . . . . . . . ESD
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . T_L
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . T_pkg
RFD15N06LE, RFD15N06LESM
60
60
±10
15
Refer to Peak Current Curve
Refer to UIS Curve
72
0.48
-55 to 175
2
300
260
UNITS
V
V
V
A
W
W/^oC
o_C
kV
o_C
o_C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T_J = 25^oC to 150^oC.
Electrical Specifications T_C = 25^oC, Unless Otherwise Specified
PARAMETER
Drain to Source Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Drain to Source On Resistance
Turn-On Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Time
Total Gate Charge
Gate Charge at 5V
Threshold Gate Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
SYMBOL
BV_DSS
V_GS(TH)
I_DSS
I_GSS
r_DS(ON)
t_ON
t_d(ON)
t_r
t_d(OFF)
t_f
t_OFF
Q_g(TOT)
Q_g(5)
Q_g(TH)
C_ISS
C_OSS
C_RSS
R_θJC
R_θJA
TEST CONDITIONS
I_D = 250µA, V_GS = 0V, Figure 13
V_GS = V_DS, I_D = 250µA, Figure 12
V_DS = 48V,
T_C = 25^oC
V_GS = 0V
T_C = 150^oC
V_GS = ±10V
I_D = 15A, V_GS = 5V
V_DD = 30V, I_D = 15A, R_L = 2.0Ω,
V_GS = 5V, R_GS = 2.5Ω
Figures 10, 18, 19
V_GS = 0V to 10V
V_GS = 0V to 5V
V_GS = 0V to 1V
V_DD = 48V,
I_D = 15A,
R_L = 3.20Ω
Figures 20, 21
V_DS = 25V, V_GS = 0V,
f = 1MHz
Figure 14
TO-251 and TO-252
Source to Drain Diode Specifications
MIN
TYP
MAX UNITS
60
-
-
V
1
-
2
V
-
-
1
µA
-
-
50
µA
-
-
10
µA
-
-
0.065
Ω
-
-
77
ns
-
11
-
ns
-
40
-
ns
-
30
-
ns
-
18
-
ns
-
-
75
ns
-
39
49
nC
-
21
26
nC
-
0.95
1.20
nC
-
855
-
pF
-
240
-
pF
-
75
-
pF
-
-
2.08
o_C/W
-
-
100
o_C/W
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX UNITS
Source to Drain Diode Voltage
V_SD
I_SD = 15A
-
-
1.5
V
Diode Reverse Recovery Time
t_rr
I_SD = 15A, dI_SD/dt = 100A/µs
-
-
80
ns
NOTES:
2. Pulse Test: Pulse Width ≤ 300ms, Duty Cycle ≤ 2%.
3. Repetitive Rating: Pulse Width limited by max junction temperature. See Transient Thermal Impedance Curve (Figure 3) and Peak Current
Capability Curve (Figure 5).
6-150