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RFD14N06L Datasheet, PDF (2/8 Pages) Intersil Corporation – 14A, 60V, 0.100 Ohm, Logic Level, N-Channel Power MOSFETs
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RFD14N06L, RFD14N06LSM, RFP14N06LS
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS
Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS
Drain Current Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Derate Above 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . .Tpkg
RFD14N06L, RFD14N06LSM,
RFP14N06LS
60
60
±10
14
Refer to Peak Current Curve
Refer to UIS Curve
48
0.32
-55 to 175
300
260
UNITS
V
V
V
A
W
W/oC
oC
oC
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TJ = 25oC to 150oC.
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
Drain to Source Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
On Resistance
Turn-On Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
BVDSS
VGS(TH)
IDSS
IGSS
rDS(ON)
tON
td(ON)
tr
td(OFF)
ID = 250µA, VGS = 0V, Figure 13
VGS = VDS, ID = 250µA, Figure 12
VDS = 48V,
VGS = 0V
TC = 25oC
TC = 150oC
VGS = ±10V
ID = 14A, VGS = 5V
VDD = 30V, ID = 7A,
RL = 4.28Ω, VGS = 5V,
RGS = 0.6Ω
Figures 10, 18, 19
Fall Time
Turn-Off Time
Total Gate Charge
Gate Charge at 5V
Threshold Gate Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Thermal Resistance Junction-to-Case
Thermal Resistance Junction-to-Ambient
tf
tOFF
Qg(TOT)
Qg(5)
Qg(TH)
CISS
COSS
CRSS
RθJC
RθJA
VGS = 0V to 10V
VGS = 0V to 5V
VGS = 0V to 1V
VDD = 48V,
ID = 14A,
RL = 3.43Ω
Figures 20, 21
VDS = 25V, VGS = 0V,
f = 1MHz
Figure 14
TO-251 and TO-252
TO-220
Source to Drain Diode Specifications
PARAMETER
Source to Drain Diode Voltage
Reverse Recovery Time
SYMBOL
VSD
trr
TEST CONDITIONS
ISD = 14A
ISD = 14A, dISD/dt = 100A/µs
MIN
TYP
MAX UNITS
60
-
-
V
1
-
2
V
-
-
1
µA
-
-
50
µA
-
-
100
nA
-
-
0.100
Ω
-
-
60
ns
-
13
-
ns
-
24
-
ns
-
42
-
ns
-
16
-
ns
-
-
100
ns
-
-
40
nC
-
-
25
nC
-
-
1.5
nC
-
670
-
pF
-
185
-
pF
-
50
-
pF
-
-
3.125
oC/W
-
-
100
oC/W
-
-
80
oC/W
MIN
TYP
MAX UNITS
-
-
1.5
V
-
-
125
ns
6-2
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