RFD12N06RLE Datasheet, PDF (2/6 Pages) Fairchild Semiconductor – 17A, 60V, 0.071 Ohm, N-Channel, Logic Level UltraFET Power MOSFET

RFD12N06RLE, RFD12N06RLESM, RFP12N06RLE
Absolute Maximum Ratings T_C = 25^oC, Unless Otherwise Specified
RFD12N06RLE,
RFD12N06RLESM,
RFP12N06RLE
UNITS
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_DSS
Drain to Gate Voltage (R_GS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_DGR
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_D
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_DM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_GS
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P_D
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
60
60
12
26
-5 to10
40
0.32
V
V
A
A
V
W
W/^oC
Single Pulse Avalanche Energy Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .E_AS
Refer to UIS SOA Curve
Electrostatic Discharge Rating ESD, MIL-STD-883, Category B(2)
2
kV
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T_J, T_STG
-55 to 150
o_C
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T_L
300
o_C
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T_pkg
260
o_C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T_J = 25^oC to 125^oC.
Electrical Specifications T_C = 25^oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
Drain to Source Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Drain to Source On Resistance (Note 2)
Turn-On Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Time
Total Gate Charge
Gate Charge at 5V
Threshold Gate Charge
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
BV_DSS I_D = 250µA, V_GS = 0V
60
V_GS(TH) V_GS = V_DS, I_D = 250µA
1
I_DSS V_DS = Rated BV_DSS, V_GS = 0V
-
V_DS = 0.8 x Rated BV_DSS, V_GS = 0V, T_C = 150^oC -
I_GSS V_GS = -5 to 10V
-
r_DS(ON) I_D = 12A, V_GS = 5V (Figures 7, 8)
-
I_D = 12A, V_GS = 4V
-
t_(ON) V_DD = 30V, I_D ≈ 6A, R_L = 5Ω, R_GS = 6.25Ω,
-
t_d(ON) ^{VGS = 5V, (Figures 15, 16)}
-
t_r
-
t_d(OFF)
-
t_f
-
t_(OFF)
-
Q_g(TOT)
Q_g(5)
Q_g(TH)
V_GS = 0V to 10V
V_GS = 0V to 5V
V_GS = 0V to 1V
V_DD = 48V, I_D = 12A, -
R_L = 4Ω,
I_G(REF) = 0.25mA
-
(Figures 17, 18)
-
R_θJC
-
R_θJA TO-251AA and TO-252AA
-
TO-220AB
-
TYP MAX UNITS
-
-
V
-
2
V
-
1
µA
-
25
µA
-
±10
µA
-
0.135
Ω
-
0.160
Ω
-
60
ns
12
-
ns
20
-
ns
24
-
ns
12
-
ns
-
60
ns
-
40
nC
-
20
nC
-
1.5
nC
-
3.125 ^oC/W
-
100 ^oC/W
-
62
o_C/W
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
Source to Drain Diode Voltage
V_SD
I_SD = 12A
Reverse Recovery Time
t_rr
I_SD = 12A, dI_SD/dt = 100A/µs
NOTES:
2. Pulse test: pulse width ≤ 300ms, duty cycle ≤ 2%.
3. Repetitive rating: pulse width is limited by maximum junction temperature.
MIN
TYP
MAX UNITS
-
-
1.2
V
-
-
200
ns
6-13