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| MUR8100E Datasheet, PDF (2/4 Pages) Fairchild Semiconductor – 8A, 1000V Ultrafast Diodes | |||
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MUR8100E, RURP8100
Electrical Speciï¬cations TC = 25oC, Unless Otherwise Speciï¬ed.
SYMBOL
TEST CONDITION
MIN
TYP
MAX
UNITS
VF
IF = 8A
IF = 8A, TC = 150oC
-
-
1.8
V
-
-
1.5
V
IR
VR = 1000V
VR = 1000V, TC = 150oC
-
-
100
µA
-
-
500
µA
trr
IF = 1A
-
-
85
ns
IF = 8A, dIF/dt = 200A/µs
-
-
100
ns
ta
IF = 8A, dIF/dt = 200A/µs
-
50
-
ns
tb
IF = 8A, dIF/dt = 200A/µs
-
30
-
ns
QRR
IF = 8A, dIF/dt = 200A/µs
-
500
-
nC
CJ
RθJC
VR = 10V, IF = 0A
-
30
-
pF
-
-
2.0
oC/W
DEFINITIONS
VF = Instantaneous forward voltage (pw = 300µs, D = 2%).
IR = Instantaneous reverse current.
trr = Reverse recovery time at dIF/dt = 100A/µs (See Figure 9), summation of ta + tb.
ta = Time to reach peak reverse current at dIF/dt = 100A/µs (See Figure 9).
tb = Time from peak IRM to projected zero crossing of IRM based on a straight line from peak IRM through 25% of IRM (See Figure 9).
QRR = Reverse recovery charge.
CJ = Junction Capacitance.
RθJC = Thermal resistance junction to case.
pw = Pulse width.
D = Duty cycle.
Typical Performance Curves
40
175oC
10
100oC
1
25oC
0.5
0
0.5
1
1.5
2
2.5
3
VF, FORWARD VOLTAGE (V)
FIGURE 1. FORWARD CURRENT vs FORWARD VOLTAGE
200
175oC
10
100oC
1
0.1
0.01
25oC
0.001
0
200
400
600
800
VR, REVERSE VOLTAGE (V)
1000
FIGURE 2. REVERSE CURRENT vs REVERSE VOLTAGE
2
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