JANSR2N7438 Datasheet, PDF (2/8 Pages) Intersil Corporation – Formerly Available As FSL913A0R4, Radiation Hardened, SEGR Resistant, P-Channel Power MOSFETs

JANSR2N7438
Absolute Maximum Ratings T_C = 25^oC, Unless Otherwise Specified
Drain to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_DS
Drain to Gate Voltage (R_GS = 20kΩ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_DGR
Continuous Drain Current
T_C = 25^oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I_D
T_C = 100^oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I_D
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_DM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_GS
Maximum Power Dissipation
T_C = 25^oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P_T
T_C = 100^oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P_T
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Single Pulsed Avalanche Current, L = 100µH, (See Test Figure) . . . . . . . . . . . . . . . . . . . . . .I_AS
Continuous Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I_S
Pulsed Source Current (Body Diode). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_SM
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T_J, T_STG
Lead Temperature (During Soldering) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T_L
(Distance >0.063in (1.6mm) from Case, 10s Max)
Weight (Typical) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
JANSR2N7438
-100
-100
7
4
21
±20
25
10
0.20
21
7
21
-55 to 150
300
1.0
UNITS
V
V
A
A
A
V
W
W
W/^oC
A
A
A
o_C
o_C
g
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Electrical Specifications T_C = 25^oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
Drain to Source Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Drain to Source On-State Voltage
Drain to Source On Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge (Not on slash sheet)
Gate Charge at 12V
Threshold Gate Charge (Not on slash sheet)
Gate Charge Source
Gate Charge Drain
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
BV_DSS
V_GS(TH)
I_DSS
I_GSS
V_DS(ON)
r_DS(ON)12
t_d(ON)
t_r
t_d(OFF)
t_f
Q_{g (TOT)}
Q_{g (12)}
Q_{g (TH)}
Q_gs
Q_gd
R_θJC
R_θJA
I_D = 1mA, V_GS = 0V
V_GS = V_DS,
I_D = 1mA
T_C = -55^oC
T_C = 25^oC
T_C = 125^oC
V_DS = -80V,
V_GS = 0V
T_C = 25^oC
T_C = 125^oC
V_GS = ±20V
T_C = 25^oC
T_C = 125^oC
V_GS = -12V, I_D = 7A
I_D = 4A,
V_GS = -12V
T_C = 25^oC
T_C = 125^oC
V_DD = -50V, I_D = 7A,
R_L = 7.14Ω, V_GS = -12V,
R_GS = 7.5Ω
V_GS = 0V to -20V
V_GS = 0V to -12V
V_GS = 0V to -2V
V_DD = -50V,
I_D = 7A
MIN
-100
-
-2.0
-1.0
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP
-
-
-
-
-
-
-
-
-
0.230
-
-
-
-
-
-
36
-
6.3
16
-
-
MAX
-
-7.0
-6.0
-
25
250
100
200
-2.31
0.300
0.492
30
50
50
50
60
40
2.3
7.3
19
5
175
UNITS
V
V
V
V
µA
µA
nA
nA
V
Ω
Ω
ns
ns
ns
ns
nC
nC
nC
nC
nC
o_C/W
o_C/W
4-2