|
JANSR2N7395 Datasheet, PDF (2/8 Pages) Intersil Corporation – 8A, 100V, 0.230 Ohm, Rad Hard, N-Channel Power MOSFET | |||
|
◁ |
JANSR2N7395
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Speciï¬ed
JANSR2N7395
UNITS
Drain to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDS
100
Drain to Gate Voltage (RGS = 20kâ¦) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR
100
Continuous Drain Current
TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
8
TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
5
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
24
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGS
±20
Maximum Power Dissipation
TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PT
25
TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PT
10
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
0.20
V
V
A
A
A
V
W
W
W/oC
Single Pulsed Avalanche Current, L = 100µH, (See Test Figure). . . . . . . . . . . . . . . . . . . . . . IAS
24
A
Continuous Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IS
8
A
Pulsed Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ISM
24
A
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
-55 to 150
oC
Lead Temperature (During Soldering) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
300
oC
(Distance >0.063in (1.6mm) from Case, 10s Max)
Weight (Typical) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1.0
g
CAUTION: Stresses above those listed in âAbsolute Maximum Ratingsâ may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this speciï¬cation is not implied.
Electrical Speciï¬cations TC = 25oC, Unless Otherwise Speciï¬ed
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNITS
Drain to Source Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Drain to Source On-State Voltage
Drain to Source On Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge (Not on Slash Sheet)
Gate Charge at 12V
BVDSS
VGS(TH)
IDSS
IGSS
ID = 1mA, VGS = 0V
VGS = VDS,
ID = 1mA
TC = -55oC
TC = 25oC
TC = 125oC
VDS = 80V,
VGS = 0V
TC = 25oC
TC = 125oC
VGS = ±20V
TC = 25oC
TC = 125oC
VDS(ON)
rDS(ON)12
VGS = 12V, ID = 8A
ID = 5A,
VGS = 12V
TC = 25oC
TC = 125oC
td(ON)
tr
td(OFF)
VDD = 50V, ID = 8A,
RL = 6.25â¦, VGS = 12V,
RGS = 7.5â¦
tf
Qg(TOT) VGS = 0V to
20V
VDD = 50V,
ID = 8A,
Qg (12)
VGS = 0V to
12V
100
-
-
V
-
-
5.0
V
1.5
-
4.0
V
0.5
-
-
V
-
-
25
µA
-
-
250
µA
-
-
100
nA
-
-
200
nA
-
-
1.93
V
-
0.170 0.230
â¦
-
-
0.361
â¦
-
-
70
ns
-
-
220
ns
-
-
100
ns
-
-
90
ns
-
-
64
nC
-
33
43
nC
Threshold Gate Charg (Not on Slash Sheet)
Gate Charge Source
Gate Charge Drain
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
Qg (TH)
Qgs
Qgd
RθJC
RθJA
VGS = 0V to 2V
-
-
2.4
nC
-
6.5
8.7
nC
-
17
22
nC
-
-
5.0 oC/W
-
-
175 oC/W
2-29
|
▷ |