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JANSR2N7292 Datasheet, PDF (2/7 Pages) Intersil Corporation – 25A, 100V, 0.070 Ohm, Rad Hard, N-Channel Power MOSFET
JANSR2N7292
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
JANSR2N7292
UNITS
Drain to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDS
100
Drain to Gate Voltage (RGS = 20kΩ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR
100
Continuous Drain Current
TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
25
TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
20
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
75
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGS
±20
Maximum Power Dissipation
TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PT
125
TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PT
50
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1.00
V
V
A
A
A
V
W
W
W/oC
Single Pulsed Avalanche Current, L = 100µH, (See Test Figure). . . . . . . . . . . . . . . . . . . . . . IAS
75
A
Continuous Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IS
25
A
Pulsed Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ISM
75
A
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TJC, TSTG
-55 to 150
oC
Lead Temperature (During Soldering) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
300
oC
(Distance >0.063in (1.6mm) from Case, 10s Max)
Weight (Typical) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
9.3
g
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
Drain to Source Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Drain to Source On-State Voltage
Drain to Source On Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge (Not on slash sheet)
Gate Charge at 10V
Threshold Gate Charge (Not on slash sheet)
Gate Charge Source
Gate Charge Drain
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
BVDSS
VGS(TH)
IDSS
IGSS
VDS(ON)
rDS(ON)
td(ON)
tr
td(OFF)
tf
Qg (TOT)
Qg (10)
Qg (TH)
Qgs
Qgd
RθJC
RθJA
ID = 1mA, VGS = 0V
VGS = VDS,
ID = 1mA
TC = -55oC
TC = 25oC
TC = 125oC
VDS = 80V,
VGS = 0V
TC = 25oC
TC = 125oC
VGS = ±20V
TC = 25oC
TC = 125oC
VGS = 10V, ID = 25A
ID = 20A,
TC = 25oC
VGS = 10V
TC = 125oC
VDD = 50V, ID = 25A,
RL = 2.0Ω, VGS = 10V,
RGS = 25Ω
VGS = 0V to 20V
VGS = 0V to 10V
VGS = 0V to 2V
VDD = 50V,
ID = 25A
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
Forward Voltage
VSD
ISD = 25A
0.6
Reverse Recovery Time
trr
ISD = 25A, dISD/dt = 100A/µs
-
MIN TYP MAX UNITS
100
-
-
V
-
-
5.0
V
2.0
-
4.0
V
1.0
-
-
V
-
-
25
µA
-
-
250
µA
-
-
100
nA
-
-
200
nA
-
-
1.84
V
-
-
0.070
Ω
-
-
0.140
Ω
-
-
134
ns
-
-
628
ns
-
-
642
ns
-
-
490
ns
-
-
552
nC
-
-
314
nC
-
-
17
nC
-
-
46
nC
-
-
164
nC
-
-
1.0 oC/W
-
-
48
oC/W
TYP
MAX
UNITS
-
1.8
V
-
1400
ns
2-19