JANSR2N7278 Datasheet, PDF (2/7 Pages) Intersil Corporation – 4A, 250V, 0.700 Ohm, Rad Hard, N-Channel Power MOSFET

JANSR2N7278
Absolute Maximum Ratings T_C = 25^oC, Unless Otherwise Specified
JANSR2N7278
UNITS
Drain to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V_DS
250
Drain to Gate Voltage (R_GS = 20kΩ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_DGR
250
Continuous Drain Current
T_C = 25^oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_D
4
T_C = 100^oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_D
2
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_DM
12
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V_GS
±20
Maximum Power Dissipation
T_C = 25^oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P_T
25
T_C = 100^oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P_T
10
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
0.20
V
V
A
A
A
V
W
W
W/^oC
Single Pulsed Avalanche Current, L = 100µH, (See Test Figure). . . . . . . . . . . . . . . . . . . . . . I_AS
12
A
Continuous Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_S
4
A
Pulsed Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_SM
12
A
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T_J, T_STG
-55 to 150
o_C
Lead Temperature (During Soldering) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T_L
300
o_C
(Distance >0.063in (1.6mm) from Case, 10s Max)
Weight (Typical) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1.0
g
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Electrical Specifications T_C = 25^oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
Drain to Source Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
BV_DSS I_D = 1mA, V_GS = 0V
250
V_GS(TH)
V_GS = V_DS,
I_D = 1mA
T_C = -55^oC
-
T_C = 25^oC
2.0
T_C = 125^oC
1.0
I_DSS
V_DS = 200V,
V_GS = 0V
T_C = 25^oC
-
T_C = 125^oC
-
I_GSS
V_GS = ±20V
T_C = 25^oC
-
T_C = 125^oC
-
Drain to Source On-State Voltage
Drain to Source On Resistance
V_DS(ON) V_GS = 10V, I_D = 4A
-
r_DS(ON)
I_D = 2A,
V_GS = 10V
T_C = 25^oC
-
T_C = 125^oC
-
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
t_d(ON) V_DD = 125V, I_D = 4A,
-
t_r
R_L = 31.3Ω, V_GS = 10V,
R_GS = 25Ω
-
t_d(OFF)
-
Fall Time
t_f
-
Total Gate Charge (Not on Slash Sheet)
Gate Charge at 10V
Q_g(TOT) V_GS = 0V to 20V V_DD = 125V,
-
Q_{g (10)}
V_GS = 0V to 10V ^{ID = 4A}
-
Threshold Gate Charge (Not on Slash Sheet) Q_g(TH) V_GS = 0V to 2V
-
Gate Charge Source
Q_gs
-
Gate Charge Drain
Q_gd
-
Thermal Resistance Junction to Case
R_θJC
-
Thermal Resistance Junction to Ambient
R_θJA
-
TYP MAX UNITS
-
-
V
-
5.0
V
-
4.0
V
-
-
V
-
25
µA
-
250
µA
-
100
nA
-
200
nA
-
2.94
V
-
0.700
Ω
-
1.68
Ω
-
35
ns
-
85
ns
-
195
ns
-
75
ns
-
120
nC
-
62
nC
-
4
nC
-
12
nC
-
30
nC
-
5.0
o_C/W
-
175
o_C/W
2-14