ISL7124SRH Datasheet, PDF (2/2 Pages) Intersil Corporation – Single-Event Hardened, Single Supply, Quad Operational Amplifier

Die Characteristics
DIE DIMENSIONS:
2640µm x 5020µm (104 mils x 198mils)
Thickness: 483µm ± 25.4µm (19 mils ± 1 mil)
INTERFACE MATERIALS:
Glassivation:
Type: PSG (Phosphorous Silicon Glass)
Thickness: 8.0kÅ ± 1.0kÅ
Top Metallization:
Type: AlSiCu
Thickness: 16.0kÅ ± 2kÅ
Substrate:
Radiation Hardened Silicon Gate
Dielectrically Isolated
Metallization Mask Layout
ISL7124SRH
Backside Finish:
Silicon
ASSEMBLY RELATED INFORMATION:
Substrate Potential:
Unbiased (DI)
ADDITIONAL INFORMATION:
Worst Case Current Density:
<2.0 x 10⁵ A/cm²
Transistor Count:
276
ISL7124SRH
-IN 4
-V_CC
+IN 4 +IN 3
-IN 3
OUT 4
Layout not yet available.
OUT 3
OUT 1
-IN 1
+IN 1 +IN 2
+V_CC
OUT 2
-IN 2
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Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without
notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reli-
able. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from
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