IRFF120 Datasheet, PDF (2/7 Pages) Intersil Corporation – 6.0A, 100V, 0.300 Ohm, N-Channel Power MOSFET

IRFF120
Absolute Maximum Ratings T_C = 25^oC, Unless Otherwise Specified
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_DS
Drain to Gate Voltage (R_GS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_DGR
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_D
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_DM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_GS
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P_D
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Single Pulse Avalanche Energy Rating (Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E_AS
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T_J, T_STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T_L
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T_pkg
IRFF120
100
100
6.0
24
±20
20
0.16
36
-55 to 150
300
260
UNITS
V
V
A
A
V
W
W/^oC
mJ
o_C
o_C
o_C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T_J = 25^oC to 125^oC.
Electrical Specifications
T_C = 25^oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
Drain to Source Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
On-State Drain Current (Note 2)
Gate to Source Leakage Current
Drain to Source On Resistance (Note 2)
Forward Transconductance (Note 2)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
(Gate to Source + Gate to Drain)
Gate to Source Charge
Gate to Drain (“Miller”) Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Internal Drain Inductance
Internal Source Inductance
BV_DSS I_D = 250µA, V_GS = 0V (Figure 10)
100
V_GS(TH) V_GS = V_DS, I_D = 250µA
2.0
I_DSS V_DS = Rated BV_DSS, V_GS = 0V
-
V_DS = 0.8 x Rated BV_DSS, V_GS = 0V, T_C = 125^oC
-
I_D(ON) V_DS > I_D(ON) x r_DS(ON)MAX, V_GS = 10V
6.0
I_GSS V_GS = ±20V
-
r_DS(ON) I_D = 3.0A, V_GS = 10V (Figures 8, 9)
-
g_fs
V_DS > I_D(ON) x r_DS(ON)MAX, I_D = 3.0A (Figure 12)
1.5
t_d(ON) V_DD ≅ 0.5 x Rated BV_DSS, I_D = 6.0A, R_G = 9.1Ω,
-
t_r
V_GS =10V (Figures 17, 18), R_L = 8Ω for V_DSS = 50V, _-
R_L = 6.3Ω for V_DSS = 40V, MOSFET Switching
t_{d(OFF) Times are Essentially Independent of Operating}
-
t_f
Temperatures
-
Q_g(TOT) V_GS = 10V, I_D = 6.0A, V_DS = 0.8 x Rated BV_DSS
-
(Figures 14, 19, 20) Gate Charge is Essentially
Q_gs
Independent of Operating Temperature
-
Q_gd
-
C_ISS V_DS = 25V, V_GS = 0V, f = 1MHz (Figure 11)
-
C_OSS
-
C_RSS
-
L_D
Measured from the Drain Modified MOSFET
-
Lead, 5.0mm (0.2in) from Symbol Showing the
Header to Center of Die Internal Devices
L_S
Measured from the Source ^Inductances
Lead, 5.0mm (0.2in) from
D
-
Header to Source Bonding
L_D
Pad
G
L_S
TYP MAX UNITS
-
-
V
-
4.0
V
-
25
µA
-
250 µA
-
-
A
- ±100 nA
0.25 0.300 Ω
2.9
-
S
20 40
ns
37 70
ns
50 100 ns
35 70
ns
10
15
nC
6.0
-
nC
4.0
-
nC
450
-
pF
20
-
pF
50
-
pF
5.0
-
nH
15
-
nH
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
R_θJC
R_θJA
Free Air Operation
S
-
-
6.25 ^oC/W
-
-
175 ^oC/W
2