HRF3205 Datasheet, PDF (2/8 Pages) Fairchild Semiconductor – 100A, 55V, 0.008 Ohm, N-Channel, Power MOSFETs

HRF3205, HRF3205S
Absolute Maximum Ratings T_C = 25^oC, Unless Othewise Specified
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_DSS
55
V
Drain to Gate Voltage (R_GS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_DGR
55
V
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V_GS
±20V
V
Drain Current
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_D
100
A
Pulsed Drain Current (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_DM
390
A
Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .E_AS
Figure 10
Power Dissipation . . .
Derate Above 25^oC
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.P_D
...
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T_J, T_STG
175
1.17
-55 to 175
W
W/^oC
o_C
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T_L
300
o_C
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T_pkg
260
o_C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T_J = 25^oC to 150^oC.
Electrical Specifications T_C = 25^oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP
Drain to Source Breakdown Voltage
Gate to Source Threshold Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Breakdown Voltage Temperature
Coefficient
BV_DSS I_D = 250µA, V_GS = 0V
V_GS(TH) V_GS = V_DS, I_D = 250µA
I_DSS
V_DS = 55V, V_GS = 0V
V_DS = 44V, V_GS = 0V, T_C = 150^oC
I_GSS
∆V_(BR)DSS/
∆T_J
V_GS = ±20V
Reference to 25^oC, I_D = 250µA
55
-
2
-
-
-
-
-
-
-
- 0.057
Drain to Source On Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
r_DS(ON)
t_d(ON)
t_r
t_d(OFF)
I_D = 59A, V_GS = 10V (Figure 4)
V_DD = 28V, I_D ≅ 59A,
R_L = 0.47Ω, V_GS = 10V,
R_GS = 2.5Ω
- 0.0065
-
14
-
100
-
43
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
Input Capacitance
Output Capacitance
t_f
Q_g
Q_gs
Q_gd
C_ISS
C_OSS
V_DD = 44V, I_D ≅ 59A,
V_GS = 10V, I_g(REF) = 3mA
(Figure 6)
V_DS = 25V, V_GS = 0V,
f = 1MHz (Figure 5)
-
70
-
-
-
-
-
-
- 4000
- 1300
Reverse Transfer Capacitance
Internal Source Inductance
Internal Drain Inductance
C_RSS
-
480
L_S
Measured From the Contact Modified MOSFET
-
7.5
Screw on Tab to Center of Die Symbol Showing the
Measured From the Drain
Lead, 6mm (0.25in) From
Package to Center of Die
Internal Devices In-
ductances
D
L_D
Measured From the Source
Lead, 6mm (0.25in) From Head-
er to Source Bonding Pad
G
L_D
-
4.5
L_S
MAX
-
4
25
250
100
-
0.008
-
-
-
-
170
32
74
-
-
-
-
-
UNITS
V
V
µA
µA
nA
V
Ω
ns
ns
ns
ns
nC
nC
nC
pF
pF
pF
nH
nH
Thermal Resistance Junction to Case
Thermal Resistance Junction to
Ambient
R_θJC
R_θJA
TO-220
TO-263 (PCB Mount, Steady State)
S
-
-
0.85 ^oC/W
-
-
62
o_C/W
-
-
40
o_C/W
4-30