FSYE430D Datasheet, PDF (2/8 Pages) Intersil Corporation – Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs

FSYE430D, FSYE430R
Absolute Maximum Ratings T_C = 25^oC, Unless Otherwise Specified
Drain to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_DS
Drain to Gate Voltage (R_GS = 20kΩ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V_DGR
Continuous Drain Current
T_C = 25^oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I_D
T_C = 100^oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I_D
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_DM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_GS
Maximum Power Dissipation
T_C = 25^oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P_T
T_C = 100^oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P_T
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Single Pulsed Avalanche Current, L = 100µH, (See Test Figure) . . . . . . . . . . . . . . . . . . . . . .I_AS
Continuous Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_S
Pulsed Source Current (Body Diode). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_SM
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T_J, T_STG
Lead Temperature (During Soldering) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T_L
(Distance >0.063in (1.6mm) from Case, 10s Max)
FSYE430D, FSYE430R
500
500
3
2
9
±20
42
17
0.33
9
3
9
-55 to 150
300
UNITS
V
V
A
A
A
V
W
W
W/ ^oC
A
A
A
o_C
o_C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Electrical Specifications T_C = 25^oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
Drain to Source Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Drain to Source On-State Voltage
Drain to Source On Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate Charge at 12V
Threshold Gate Charge
Gate Charge Source
Gate Charge Drain
Plateau Voltage
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Thermal Resistance Junction to Case
BV_DSS
V_GS(TH)
I_DSS
I_GSS
V_DS(ON)
r_DS(ON)12
t_d(ON)
t_r
t_d(OFF)
t_f
Q_{g (TOT)}
Q_{g (12)}
Q_{g (TH)}
Q_gs
Q_gd
V_(PLATEAU)
C_ISS
C_OSS
C_RSS
R_θJC
I_D = 1mA, V_GS = 0V
V_GS = V_DS,
I_D = 1mA
V_DS = 400V,
V_GS = 0V
V_GS = ±20V
T_C = -55^oC
T_C = 25^oC
T_C = 125^oC
T_C = 25^oC
T_C = 125^oC
T_C = 25^oC
T_C = 125^oC
V_GS = 12V, I_D = 3A
I_D = 2A,
V_GS = 12V
T_C = 25^oC
T_C = 125^oC
V_DD = 250V, I_D = 3A,
R_L = 83.3Ω, V_GS = 12V,
R_GS = 7.5Ω
V_GS = 0V to 20V
V_GS = 0V to 12V
V_GS = 0V to 2V
V_DD = 250V,
I_D = 3A
I_D = 3A, V_DS = 15V
V_DS = 25V, V_GS = 0V,
f = 1MHz
MIN
TYP
MAX UNITS
500
-
-
V
-
-
5.0
V
1.5
-
4.0
V
0.5
-
-
V
-
-
25
µA
-
-
250
µA
-
-
100
nA
-
-
200
nA
-
-
8.51
V
-
1.9
2.70
Ω
-
-
4.80
Ω
-
-
20
ns
-
-
20
ns
-
-
45
ns
-
-
25
ns
-
-
51
nC
-
30
35
nC
-
-
2.1
nC
-
6.3
8.0
nC
-
14
19
nC
-
7
-
V
-
800
-
pF
-
120
-
pF
-
20
-
pF
-
-
3.0
o_C/W
4-2