FRM440D Datasheet, PDF (2/6 Pages) Intersil Corporation – 6A, 500V, 1.40 Ohm, Rad Hard, N-Channel Power MOSFETs

FRM440D, FRM440R, FRM440H
Pre-Radiation Electrical Specifications TC = +25^oC, Unless Otherwise Specified
PARAMETER
Drain-Source Breakdown Volts
Gate-Threshold Volts
Gate-Body Leakage Forward
Gate-Body Leakage Reverse
Zero-Gate Voltage
Drain Current
Rated Avalanche Current
Drain-Source On-State Volts
Drain-Source On Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Gate-Charge Threshold
Gate-Charge On State
Gate-Charge Total
Plateau Voltage
Gate-Charge Source
Gate-Charge Drain
Diode Forward Voltage
Reverse Recovery Time
Junction-To-Case
Junction-To-Ambient
SYMBOL
BVDSS
VGS(th)
IGSSF
IGSSR
IDSS1
IDSS2
IDSS3
IAR
VDS(on)
RDS(on)
td(on)
tr
td(off)
tf
QG(th)
QG(on)
QGM
VGP
QGS
QGD
VSD
TT
Rθjc
Rθja
TEST CONDITIONS
VGS = 0, ID = 1mA
VDS = VGS, ID = 1mA
VGS = +20V
VGS = -20V
VDS = 500V, VGS = 0
VDS = 400V, VGS = 0
VDS = 400V, VGS = 0, TC = +125^oC
Time = 20µs
VGS = 10V, ID = 6A
VGS = 10V, ID = 4A
VDD = 250V, ID = 6A
Pulse Width = 3µs
Period = 300µs, Rg = 25Ω
0 ≤ VGS ≤ 10 (See Test Circuit)
VDD = 250V, ID = 6A
IGS1 = IGS2
0 ≤ VGS ≤ 20
ID = 6A, VGD = 0
I = 6A; di/dt = 100A/µs
Free Air Operation
LIMITS
MIN
MAX
500
-
2.0
4.0
-
100
-
100
-
1
-
0.025
-
0.25
-
18
-
8.82
-
1.40
-
60
-
84
-
476
-
116
2
8
32
128
65
250
3
12
6
24
11
46
0.6
1.8
-
1000
-
1.0
-
30
UNITS
V
V
nA
nA
mA
A
V
Ω
ns
nc
V
nc
V
ns
o_C/W
V_GS = 12V
0V
V_DD
R_GS
R_L
V_DS
DUT
FIGURE 1. RESISTIVE SWITCHING TEST CIRCUIT
ELECTRONIC SWITCH OPENS
WHEN I_AS IS REACHED
V_DS
L
CURRENT
TRANSFORMER
+
I_AS
-
VARY t_P TO OBTAIN
REQUIRED PEAK I_AS
50Ω
V_GS ≤ 20V
t_P
50Ω
0V
DUT
+
V_DD
-
50V -150V
FIGURE 2. UNCLAMPED ENERGY TEST CIRCUIT
4-2