CA3086 Datasheet, PDF (2/7 Pages) Intersil Corporation – General Purpose NPN Transistor Array

CA3086
Absolute Maximum Ratings
The following ratings apply for each transistor in the device:
Collector-to-Emitter Voltage, V_CEO . . . . . . . . . . . . . . . . . . . . .15V
Collector-to-Base Voltage, V_CBO . . . . . . . . . . . . . . . . . . . . . . .20V
Collector-to-Substrate Voltage, V_CIO (Note 1) . . . . . . . . . . . . .20V
Emitter-to-Base Voltage, V_EBO . . . . . . . . . . . . . . . . . . . . . . . . .5V
Collector Current, I_C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA
Operating Conditions
Temperature Range. . . . . . . . . . . . . . . . . . . . . . . . . -55^oC to 125^oC
Thermal Information
Thermal Resistance (Typical, Note 2)
θ_JA (^oC/W) θ_JC (^oC/W)
PDIP Package . . . . . . . . . . . . . . . . . . . 110
N/A
SOIC Package . . . . . . . . . . . . . . . . . . . 130
N/A
Maximum Power Dissipation (Any one transistor) . . . . . . . . .300mW
Maximum Junction Temperature (Plastic Package) . . . . . . . .150^oC
Maximum Storage Temperature Range . . . . . . . . . -65^oC to 150^oC
Maximum Lead Temperature (Soldering 10s) . . . . . . . . . . . . 300^oC
(SOIC - Lead Tips Only)
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
1. The collector of each transistor in the CA3086 is isolated from the substrate by an integral diode. The substrate (Terminal 13) must be connected
to the most negative point in the external circuit to maintain isolation between transistors and to provide for normal transistor action. To avoid
undesirable coupling between transistors, the substrate (Terminal 13) should be maintained at either DC or signal (AC) ground. A suitable
bypass capacitor can be used to establish a signal ground.
2. θ_JA is measured with the component mounted on an evaluation PC board in free air.
Electrical Specifications T_A = 25^oC, For Equipment Design
PARAMETER
SYMBOL TEST CONDITIONS
MIN
TYP
MAX
UNITS
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Collector-to-Substrate Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Collector-Cutoff Current (Figure 1)
Collector-Cutoff Current (Figure 2)
DC Forward-Current Transfer Ratio (Figure 3)
V_(BR)CBO l_C = 10µA, I_E = 0
20
60
-
V
V_(BR)CEO I_C = 1mA, I_B = 0
15
24
-
V
V_(BR)ClO I_C = 10µA, I_CI = 0
20
60
-
V
V_(BR)EBO I_E = 10µA, I_C = 0
5
7
-
V
I_CBO
V_CB = 10V, I_E = 0,
-
0.002
100
nA
I_CEO
V_CE = 10V, I_B = 0,
-
(Figure 2)
5
µA
h_FE
V_CE = 3V, I_C = 1mA
40
100
-
Electrical Specifications T_A = 25^oC, Typical Values Intended Only for Design Guidance
PARAMETER
DC Forward-Current Transfer Ratio
(Figure 3)
Base-to-Emitter Voltage (Figure 4)
V_BE Temperature Coefficient (Figure 5)
Collector-to-Emitter
Saturation Voltage
Noise Figure (Low Frequency)
SYMBOL
h_FE
V_BE
∆V_BE/∆T
V_{CE SAT}
TEST CONDITIONS
V_CE = 3V
V_CE = 3V
V_CE = 3V, l_C = 1 mA
I_B = 1mA, I_C = 10mA
I_C = 10mA
I_C = 10µA
I_E = 1 mA
I_E = 10mA
NF
f = 1kHz, V_CE = 3V, I_C = 100µA,
R_S = 1kΩ
TYPICAL
VALUES
100
54
0.715
0.800
-1.9
0.23
3.25
UNITS
V
V
mV/^oC
V
dB
2