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| ISL705AEH Datasheet, PDF (16/19 Pages) Intersil Corporation – Rad-Hard, 5.0V/3.3V μ-Processor Supervisory Circuits | |||
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ISL705AEH, ISL705BEH, ISL705CEH, ISL706AEH, ISL706BEH, ISL706CEH
Package Characteristics
Weight of Packaged Device
0.31 Grams typical
Lid Characteristics
Finish: Gold
Lid Potential: Unbiased
Case Isolation to Any Lead: 20 x 109 ⦠(min)
Die Characteristics
Die Dimensions
2030µm x 2030µm (79.9 mils x 79.9 mils)
Thickness: 483µm ± 25.4µm (19.0 mils ± 1 mil)
Interface Materials
GLASSIVATION
Type: Silicon Oxide and Silicon Nitride
Thickness: 0.3µm ± 0.03µm to 1.2µm ± 0.12µm
Metallization Mask Layout
TOP METALLIZATION
Type: AlCu (99.5%/0.5%)
Thickness: 2.7µm ±0.4µm
BACKSIDE FINISH
Silicon
PROCESS
0.6µM BiCMOS Junction Isolated
ASSEMBLY RELATED INFORMATION
Substrate Potential
Unbiased
ADDITIONAL INFORMATION
Worst Case Current Density
< 2 x 105 A/cm2
Transistor Count
1400
MR
WDO
VDD
GND
PFI
16
PFO
RST, RST, RST_OD
WDI
FN8262.0
March 30, 2012
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