HI-546_05 Datasheet, PDF (16/24 Pages) Intersil Corporation – Single 16 and 8, Differential 8-Channel and 4-Channel CMOS Analog MUXs with Active Overvoltage Protection

Die Characteristics
DIE DIMENSIONS:
83 mils x 108 mils
METALLIZATION:
Type: CuAl
Thickness: 16kÅ ±2kÅ
SUBSTRATE POTENTIAL (NOTE):
-V_SUPPLY
HI-546, HI-547, HI-548, HI-549
PASSIVATION:
Type: Nitride Over Silox
Nitride Thickness: 3.5kÅ ±1kÅ
Silox Thickness: 12kÅ ±2kÅ
WORST CASE CURRENT DENSITY:
1.4 x 10⁵ A/cm
TRANSISTOR COUNT:
253
PROCESS:
CMOS-DI
NOTE: The substrate appears resistive to the -V_SUPPLY terminal, therefore it may be left floating (Insulating Die Mount) or it may be mounted on a
conductor at -V_SUPPLY potential.
Metallization Mask Layouts
HI-548
IN 6 IN 7 IN 8
(11) (10) (9)
OUT IN 4 IN 3
(8)
(7) (6)
HI-549
IN 3B IN 4B OUT B
(11) (10) (9)
OUT A IN 4A IN 3A
(8)
(7) (6)
IN 5
(12)
+V
(13)
GND
(14)
A₂
A₁ A₀
EN
(15)
(16) (1)
(2)
IN 2
IN 2B
(5)
(12)
IN 1
IN 1B
(4)
(13)
-V
+V
(3)
(14)
IN 2A
(5)
IN 1A
(4)
-V
(3)
GND
(15)
A₁ A₀
EN
(16) (1)
(2)
16