RHRU50120 Datasheet, PDF (1/4 Pages) Intersil Corporation – 50A, 1200V Hyperfast Diode

RHRU50120
April 1995 File Number 3946.1
50A, 1200V Hyperfast Diode
The RHRU50120 (TA49100) are hyperfast diodes with soft
recovery characteristics (t_RR < 85ns). They have half the
recovery time of ultrafast diodes and are silicon nitride passi-
vated ion-implanted epitaxial planar construction.
These devices are intended for use as freewheeling/clamp-
ing diodes and rectifiers in a variety of switching power sup-
plies and other power switching applications. Their low
stored charge and hyperfast soft recovery minimize ringing
and electrical noise in many power switching circuits reduc-
ing power loss in the switching transistors.
Ordering Information
PACKAGING AVAILABILITY
PART NUMBER
PACKAGE
BRAND
RHRU50120
TO-218
RHRU50120
NOTE: When ordering, use the entire part number.
Features
• Hyperfast with Soft Recovery . . . . . . . . . . . . . . . .<85ns
• Operating Temperature . . . . . . . . . . . . . . . . . . . +175^oC
• Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . .1200V
• Avalanche Energy Rated
• Planar Construction
Applications
• Switching Power Supplies
• Power Switching Circuits
• General Purpose
Package
SINGLE LEAD JEDEC STYLE TO-218
ANODE
CATHODE
(FLANGE)
Symbol
K
Absolute Maximum Ratings T_C = +25^oC, Unless Otherwise Specified
Peak Repetitive Reverse Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_RRM
Working Peak Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_RWM
DC Blocking Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_R
Average Rectified Forward Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_F(AV)
(T_C = 50^oC)
Repetitive Peak Surge Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_FSM
(Square Wave, 20kHz)
Nonrepetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_FSM
(Halfwave, 1 Phase, 60Hz)
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P_D
Avalanche Energy (See Figures 10 and 11). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E_AVL
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T_STG, T_J
A
RHRU50120
1200
1200
1200
50
100
500
150
50
-65 to +175
UNITS
V
V
V
A
A
A
W
mj
o_C
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
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