RHRG7570 Datasheet, PDF (1/4 Pages) Intersil Corporation – 75A, 700V - 1000V Hyperfast Diodes

RHRG7570, RHRG7580, RHRG7590, RHRG75100
Data Sheet
April 1995 File Number 3923.1
75A, 700V - 1000V Hyperfast Diodes
RHRG7570, RHRG7580, RHRG7590 and RHRG75100
(TA49068) are hyperfast diodes with soft recovery character-
istics (t_RR < 85ns). They have half the recovery time of
ultrafast diodes and are silicon nitride passivated ion-
implanted epitaxial planar construction.
These devices are intended for use as freewheeling/clamping
diodes and rectifiers in a variety of switching power supplies
and other power switching applications. Their low stored
charge and hyperfast soft recovery minimize ringing and elec-
trical noise in many power switching circuits reducing power
loss in the switching transistors.
Ordering Information
PACKAGING AVAILABILITY
PART NUMBER
PACKAGE
BRAND
RHRG7570
TO-247
RHRG7570
RHRG7580
TO-247
RHRG7580
RHRG7590
TO-247
RHRG7590
RHRG75100
TO-247
RHRG75100
NOTE: When ordering, use the entire part number.
Features
• Hyperfast with Soft Recovery . . . . . . . . . . . . . . . .<85ns
• Operating Temperature . . . . . . . . . . . . . . . . . . . +175^oC
• Reverse Voltage Up To . . . . . . . . . . . . . . . . . . . . . .1000V
• Avalanche Energy Rated
• Planar Construction
Applications
• Switching Power Supplies
• Power Switching Circuits
• General Purpose
Package
JEDEC STYLE TO-247
CATHODE
(BOTTOM
SIDE METAL)
ANODE
CATHODE
Symbol
K
A
Absolute Maximum Ratings T_C = +25^oC, Unless Otherwise Specified
RHRG7570
Peak Repetitive Reverse Voltage. . . . . . . . . . . . . . . . . . . . . .V_RRM
700
Working Peak Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . V_RWM
700
DC Blocking Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_R
700
Average Rectified
(T_C = +52^oC)
Forward
Current
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
I_F(AV)
75
Repetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . .I_FSM
150
(Square Wave, 20kHz)
Nonrepetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . .I_FSM
750
(Halfwave, 1 Phase, 60Hz)
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . P_D
Avalanche Energy (L = 40mH) (See Figures 10 and 11). . . . E_AVL
Operating and Storage Temperature . . . . . . . . . . . . . . . . T_STG, T_J
190
50
-65 to +175
RHRG7580
800
800
800
75
150
750
190
50
-65 to +175
RHRG7590
900
900
900
75
RHRG75100
1000
1000
1000
75
UNITS
V
V
V
A
150
150
A
750
750
A
190
190
W
50
50
mj
-65 to +175 -65 to +175 ^oC
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
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