RFP4N05 Datasheet, PDF (1/5 Pages) Intersil Corporation – 4A, 50V and 60V, 0.800 Ohm, N-Channel Power MOSFETs

RFP4N05, RFP4N06
June 1999 File Number 2880.2
4A, 50V and 60V, 0.800 Ohm, N-Channel
Power MOSFETs
These are N-Channel enhancement mode silicon gate
power field effect transistors designed for applications such
as switching regulators, switching converters, motor drivers,
relay drivers and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
These types can be operated directly from integrated
circuits.
Formerly developmental type TA09378.
Ordering Information
PART NUMBER
PACKAGE
BRAND
RFP4N05
TO-220AB
RFP4N05
RFP4N06
TO-220AB
RFP4N06
NOTE: When ordering, include the entire part number.
Features
• 4A, 50V and 60V
• r_DS(ON) = 0.800Ω
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
D
G
S
Packaging
JEDEC TO-220AB
DRAIN (FLANGE)
SOURCE
DRAIN
GATE
4-523
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999