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| RFP2P08 Datasheet, PDF (1/5 Pages) Intersil Corporation – -2A, -80V and -100V, 3.500 Ohm, P-Channel Power MOSFETs | |||
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Semiconductor
Data Sheet
RFP2P08, RFP2P10
October 1998 File Number 2870.1
-2A, -80V and -100V, 3.500 Ohm,
P-Channel Power MOSFETs
Features
⢠-2A, -80V and -100V
[ /Title
(RFP2P
08,
RFP2P
10)
/Sub-
ject (-
2A, -
80V
and -
100V,
3.500
Ohm,
P-Chan-
nel
Power
MOS-
FETs)
/Author
()
/Key-
words
(Harris
Semi-
conduc-
tor,
P-Chan-
nel
Power
MOS-
FETs,
TO-
220AB)
/Cre-
ator ()
/DOCI
NFO
pdf-
These are P-Channel enhancement mode silicon gate
power ï¬eld effect transistors designed for applications such
as switching regulators, switching converters. motor drivers,
relay drivers, and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
These types can be operated directly from integrated
circuits.
Formerly developmental type TA_____.
Ordering Information
PART NUMBER
PACKAGE
BRAND
RFP2P08
TO-220AB
RFP2P08
RFP2P10
TO-220AB
RFP2P10
NOTE: When ordering, use entire part number.
⢠rDS(ON) = 3.500â¦
⢠Related Literature
- TB334 âGuidelines for Soldering Surface Mount
Components to PC Boards
Symbol
D
G
S
Packaging
TO-220AB
DRAIN (FLANGE)
SOURCE
DRAIN
GATE
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-800-4-HARRIS | Copyright © Harris Corporation 1998
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