|
RFP2N20L Datasheet, PDF (1/5 Pages) Intersil Corporation – 2A, 200V, 3.500 Ohm, Logic Level, N-Channel Power MOSFET | |||
|
Data Sheet
RFP2N20L
July 1999 File Number 2875.2
2A, 200V, 3.500 Ohm, Logic Level,
N-Channel Power MOSFET
The RFP2N20L N-Channel enhancement mode silicon gate
power ï¬eld effect transistor is speciï¬cally designed for use
with logic level (5V) driving sources in applications such as
programmable controllers, automotive switching, and
solenoid drivers. This performance is accomplished through
a special gate oxide design which provides full rated
conduction at gate biases in the 3V - 5V range, thereby
facilitating true on-off power control directly from logic circuit
supply voltages.
Formerly developmental type TA09532.
Ordering Information
PART NUMBER
PACKAGE
BRAND
RFP2N20L
TO-220AB
RFP2N20L
NOTE: When ordering, include the entire part number.
Features
⢠2A, 200V
⢠rDS(ON) = 3.500â¦
⢠Design Optimized for 5V Gate Drives
⢠Can be Driven Directly from QMOS, NMOS,
TTL Circuits
⢠Compatible with Automotive Drive Requirements
⢠SOA is Power Dissipation Limited
⢠Nanosecond Switching Speeds
⢠Linear Transfer Characteristics
⢠High Input Impedance
⢠Majority Carrier Device
⢠Related Literature
- TB334 âGuidelines for Soldering Surface Mount
Components to PC Boardsâ
Symbol
D
Packaging
G
S
JEDEC TO-220AB
DRAIN (FLANGE)
SOURCE
DRAIN
GATE
6-256
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999
|
▷ |