RFP22N10 Datasheet, PDF (1/6 Pages) Fairchild Semiconductor – 22A, 100V, 0.080 Ohm, N-Channel Power MOSFETs

Data Sheet
RFP22N10, RF1S22N10SM
July 1999 File Number 2385.3
22A, 100V, 0.080 Ohm, N-Channel Power
MOSFETs
These N-Channel power MOSFETs are manufactured using
the MegaFET process. This process, which uses feature
sizes approaching those of LSI integrated circuits gives
optimum utilization of silicon, resulting in outstanding
performance. They were designed for use in applications
such as switching regulators, switching converters, motor
drivers, and relay drivers. These transistors can be operated
directly from integrated circuits.
Formerly developmental type TA9845.
Ordering Information
PART NUMBER
PACKAGE
BRAND
RFP22N10
TO-220AB
RFP22N10
RF1S22N10SM
TO-263AB
F1S22N10
NOTE: When ordering use the entire part number. Add the suffix, 9A,
to obtain the TO-263AB variant in tape and reel, e.g. RF1S22N10SM9A.
Features
• 22A, 100V
• r_DS(ON) = 0.080Ω
• UIS SOA Rating Curve (Single Pulse)
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• 175^oC Operating Temperature
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
D
G
S
Packaging
JEDEC TO-220AB
DRAIN
(FLANGE)
SOURCE
DRAIN
GATE
JEDEC TO-263AB
GATE
SOURCE
DRAIN
(FLANGE)
4-499
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
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