RFM12N35 Datasheet, PDF(1/4 Page) Intersil Corporation – 12A, 350V and 400V, 0.500 Ohm, N-Channel Power MOSFETs

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RFM12N35 Datasheet, PDF (1/4 Pages) Intersil Corporation – 12A, 350V and 400V, 0.500 Ohm, N-Channel Power MOSFETs

Semiconductor

September 1998

RFM12N35,

RFM12N40

12A, 350V and 400V, 0.500 Ohm,

N-Channel Power MOSFETs

[ /Title

(RFM12

N35,

RFM12

N40)

/Sub-

ject

(12A,

350V

and

400V,

0.500

Ohm,

N-Chan-

nel

Power

MOS-

FETs)

/Author

()

/Key-

words

(12A,

350V

and

400V,

0.500

Ohm,

N-Chan-

nel

Power

MOS-

FETs)

/Cre-

ator ()

/DOCIN

Features

â¢ 12A, 350V and 400V

â¢ rDS(ON) = 0.500â¦

Ordering Information

PART NUMBER

PACKAGE

BRAND

RFM12N35

TO-204AA

RFM12N35

RFM12N40

TO-204AA

RFM12N40

NOTE: When ordering, use the entire part number.

Description

These are N-Channel enhancement mode silicon gate

power ï¬eld effect transistors designed for applications such

as switching regulators, switching converters, motor drivers,

relay drivers and drivers for high power bipolar switching

transistors requiring high speed and low gate drive power.

These types can be operated directly from integrated circuits.

Formerly developmental type TA17434.

Symbol

Packaging

DRAIN

(FLANGE)

JEDEC TO-204AA

GATE (PIN 1)

SOURCE (PIN 2)

CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.

5-1

File Number 1787.1

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