RFD16N03L Datasheet, PDF (1/8 Pages) Fairchild Semiconductor – 16A, 30V, Avalanche Rated N-Channel Logic Level Enhancement-Mode Power MOSFETs

Data Sheet
RFD16N03L, RFD16N03LSM
April 1999 File Number 4013.2
16A, 30V, 0.025 Ohm, Logic Level,
N-Channel Power MOSFETs
These are N-Channel power MOSFETs manufactured using
the MegaFET process. This process, which uses feature
sizes approaching those of LSI circuits, gives optimum
utilization of silicon, resulting in outstanding performance.
They were designed for use in applications such as
switching regulators, switching converters, motor drivers and
relay drivers. This performance is accomplished through a
special gate oxide design which provides full rated
conductance at gate bias in the 3V to 5V range, thereby
facilitating true on-off power control directly from logic level
(5V) integrated circuits.
Formerly developmental type TA49030.
Ordering InformationS
PART NUMBER
PACKAGE
BRAND
RFD16N03L
TO-251AA
16N03L
RFD16N03LSM
TO-252AA
16N03L
NOTE: When ordering, use the entire part number. Add the suffix 9A,
to obtain the TO-252AA variant in tape and reel, e.g. RFD16N03LSM9A.
Features
• 16A, 30V
• r_DS(ON) = 0.025Ω
• Temperature Compensating PSPICE™ Model
• Can be Driven Directly from CMOS, NMOS,
and TTL Circuits
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• 175^oC Operating Temperature
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
DRAIN
GATE
SOURCE
Packaging
DRAIN
(FLANGE)
JEDEC TO-251AA
SOURCE
DRAIN
GATE
JEDEC TO-252AA
DRAIN
(FLANGE)
GATE
SOURCE
6-156
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
PSPICE™ is a trademark of MicroSim Corporation.
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