MWS5114 Datasheet, PDF (1/7 Pages) Intersil Corporation – 1024-Word x 4-Bit LSI Static RAM

MWS5114
March 1997
1024-Word x 4-Bit
LSI Static RAM
Features
• Fully Static Operation
• Industry Standard 1024 x 4 Pinout (Same as Pinouts
for 6514, 2114, 9114, and 4045 Types)
• Common Data Input and Output
• Memory Retention for Standby Battery Voltage as Low
as 2V Min
• All Inputs and Outputs Directly TTL Compatible
• Three-State Outputs
• Low Standby and Operating Power
Description
The MWS5114 is a 1024 word by 4-bit static random access
memory that uses the ion-implanted silicon gate comple-
mentary MOS (CMOS) technology. It is designed for use in
memory systems where low power and simplicity in use are
desirable. This type has common data input and data output
and utilizes a single power supply of 4.5V to 6.5V.
The MWS5114 is supplied in 18 lead, hermetic, dual-in-line
sidebrazed ceramic packages (D suffix) and in 18 lead dual-
in-line plastic packages (E suffix).
Ordering Information
200ns
MWS5114E3
MWS5114D3
MWS5114D3X
250ns
MWS5114E2
MWS5114E2X
MWS5114D2
300ns
MWS5114E1
MWS5114D1
TEMPERATURE RANGE PACKAGE
0^oC to +70^oC
PDIP
Burn-In
0^oC to +70^oC
SBDIP
Burn-In
PKG. NO.
E18.3
E18.3
D18.3
D18.3
Pinout
MWS5114
(PDIP, SBDIP)
TOP VIEW
A6 1
A5 2
A4 3
A3 4
A0 5
A1 6
A2 7
CS 8
V_SS 9
18 V_DD
17 A7
16 A8
15 A9
14 I/O1
13 I/O2
12 I/O3
11 I/O4
10 _WE
FUNCTION
Read
Write
Not Selected
OPERATIONAL MODES
CS
WE
DATA PINS
0
1
Output: Dependent on data
0
0
Input
1
X
High Impedance
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999
6-160
File Number 1325.2