JANSR2N7410 Datasheet, PDF (1/8 Pages) Intersil Corporation – 3.5A, 100V, 0.600 Ohm, Rad Hard, N-Channel Power MOSFET

JANSR2N7410
Formerly FSL110R4
March 1998
3.5A, 100V, 0.600 Ohm, Rad Hard,
N-Channel Power MOSFET
Features
• 3.5A, 100V, r_DS(ON) = 0.600Ω
• Total Dose
- Meets Pre-RAD Specifications to 100K RAD (Si)
• Single Event
- Safe Operating Area Curve for Single Event Effects
- SEE Immunity for LET of 36MeV/mg/cm² with
V_DS up to 80% of Rated Breakdown and
V_GS of 10V Off-Bias
• Dose Rate
- Typically Survives 3E9 RAD (Si)/s at 80% BV_DSS
- Typically Survives 2E12 if Current Limited to I_DM
• Photo Current
- 0.3nA Per-RAD(Si)/s Typically
• Neutron
- Maintain Pre-RAD Specifications
for 3E13 Neutrons/cm²
- Usable to 3E14 Neutrons/cm²
Ordering Information
PART NUMBER
JANSR2N7410
PACKAGE
TO-205AF
Die Family TA17616.
MIL-PRF-19500/638.
BRAND
JANSR2N7410
Description
The Discrete Products Operation of Intersil Corporation has
developed a series of Radiation Hardened MOSFETs specif-
ically designed for commercial and military space applica-
tions. Enhanced Power MOSFET immunity to Single Event
Effects (SEE), Single Event Gate Rupture (SEGR) in particu-
lar, is combined with 100K RADS of total dose hardness to
provide devices which are ideally suited to harsh space envi-
ronments. The dose rate and neutron tolerance necessary
for military applications have not been sacrificed.
The Intersil portfolio of SEGR resistant radiation hardened
MOSFETs includes N-Channel and P-Channel devices in a
variety of voltage, current and on-resistance ratings.
Numerous packaging options are also available.
This MOSFET is an enhancement-mode silicon-gate power
field-effect transistor of the vertical DMOS (VDMOS) struc-
ture. It is specially designed and processed to be radiation
tolerant. The MOSFET is well suited for applications
exposed to radiation environments such as switching regula-
tion, switching converters, motor drives, relay drivers and
drivers for high-power bipolar switching transistors requiring
high speed and low gate drive power. This type can be oper-
ated directly from integrated circuits.
Also available at other radiation and screening levels. See us
on the web, Intersil’s home page: http://www.intersil.com.
Contact your local Intersil Sales Office for additional informa-
tion.
Symbol
Package
TO-205AF
DG S
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
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2-94
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