ITF87068SQT Datasheet, PDF (1/12 Pages) Intersil Corporation – 9A, 20V, 0.015 Ohm, P-Channel, 2.5V Specified Power MOSFET

Data Sheet
ITF87068SQT
March 2000 File Number 4811.2
9A, 20V, 0.015 Ohm, P-Channel,
2.5V Specified Power MOSFET
Packaging
TSSOP-8
5
1
23 ₄
Symbol
DRAIN(1)
SOURCE(2)
SOURCE(3)
GATE(4)
DRAIN(8)
SOURCE(7)
SOURCE(6)
DRAIN(5)
Features
• Ultra Low On-Resistance
- r_DS(ON) = 0.015Ω, V_GS = −4.5V
- r_DS(ON) = 0.016Ω, V_GS = −4.0V
- r_DS(ON) = 0.023Ω, V_GS = −2.5V
• 2.5V Gate Drive Capability
• Gate to Source Protection Diode
• Simulation Models
- Temperature Compensated PSPICE™ and SABER
Electrical Models
- Spice and SABER Thermal Impedance Models
- www.intersil.com
• Peak Current vs Pulse Width Curve
• Transient Thermal Impedance Curve vs Board Mounting
Area
• Switching Time vs R_GS Curves
Ordering Information
PART NUMBER
PACKAGE
BRAND
ITF87068SQT
TSSOP-8
87068
NOTE: When ordering, use the entire part number. ITF87068SQT2
is available only in tape and reel.
Absolute Maximum Ratings T_A = 25^oC, Unless Otherwise Specified
ITF87068SQT
UNITS
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_DSS
Drain to Gate Voltage (R_GS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_DGR
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_GS
Drain Current
Continuous
Continuous
Continuous
Continuous
(T_A
(T_A
(T_A
(T_A
=
=
=
=
22115500^oo_00CCooCC,, VV,, _VVGGGGSSSS====--44--..4250..VV05VV)) _{))((NN((NNoottooeettee22))22))..}
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I_D
I_D
I_D
I_D
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I_DM
Power Dissipation (Note 2)
Derate Above 25^oC . . . .
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P_D
...
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T_J, T_STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T_L
Package Body for 10s, See Techbrief TB370 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T_pkg
NOTES:
1. T_J = 25^oC to 125^oC.
2. 62.5^oC/W measured using FR-4 board with 1.0 in² (645.2 mm²) copper pad at 10s.
-20
-20
±12
9.0
9.0
5.5
4.5
Figure 4
2.0
16
-55 to 150
300
260
V
V
V
A
A
A
A
W
mW/^oC
o_C
o_C
o_C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
1
CAUTION: These devices are sensitive to electrostatic discharge. Follow proper ESD Handling Procedures.
SABER© is a Copyright of Analogy Inc. PSPICE® is a registered trademark of MicroSim Corporation.
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 2000