ITF87012SVT Datasheet, PDF (1/12 Pages) Intersil Corporation – 6A, 20V, 0.035 Ohm, N-Channel, 2.5V Specified Power MOSFET

ITF87012SVT
Data Sheet
6A, 20V, 0.035 Ohm, N-Channel,
2.5V Specified Power MOSFET
Packaging
TSOP-6
4
1
2
3
Symbol
DRAIN(1)
DRAIN(2)
GATE(3)
DRAIN(6)
DRAIN(5)
SOURCE(4)
March 2000 File Number 4810.2
Features
• Ultra Low On-Resistance
- r_DS(ON) = 0.035Ω, V_GS = 4.5V
- r_DS(ON) = 0.038Ω, V_GS = 4.0V
- r_DS(ON) = 0.045Ω, V_GS = 2.5V
• 2.5 V Gate Drive Capability
• Small Profile Package
• Gate to Source Protection Diode
• Simulation Models
- Temperature Compensated PSPICE™ and SABER
Electrical Models
- Spice and SABER Thermal Impedance Models
- www.intersil.com
• Peak Current vs Pulse Width Curve
• Transient Thermal Impedance Curve vs Board Mounting
Area
• Switching Time vs R_GS Curves
Ordering Information
PART NUMBER
PACKAGE
BRAND
ITF87012SVT
TSOP-6 (SC-95) 012
NOTE: When ordering, use the entire part number. ITF87012SVT is
available only in tape and reel.
Absolute Maximum Ratings T_A = 25^oC, Unless Otherwise Specified
ITF87012SVT
UNITS
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_DSS
Drain to Gate Voltage (R_GS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_DGR
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_GS
Drain Current
Continuous (T_A= 25^oC, V_GS = 4.5V) (Figure 2) (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . I_D
Continuous (T_A= 25^oC, V_GS = 4.0V) (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_D
Continuous
Continuous
(T_A=
(T_A=
100^oC,
100^oC,
V_GS
V_GS
=
=
4.0V)
2.5V)
(Note
(Note
2)
2)
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
I_D
I_D
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I_DM
Power Dissipation (Note 2)
Derate Above 25^oC . . . .
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
P_D
...
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T_J, T_STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T_L
Package Body for 10s, See Techbrief TB370 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T_pkg
NOTES:
1. T_J = 25^oC to 125^oC.
2. 62.5^oC/W measured using FR-4 board with 0.40 in² (258.1 mm²) copper pad at 2 second.
20
20
±12
6.0
5.5
3.5
3.0
Figure 4
2
16
-55 to 150
300
260
V
V
V
A
A
A
A
A
W
mW/^oC
o_C
o_C
o_C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
1
CAUTION: These devices are sensitive to electrostatic discharge. Follow proper ESD Handling Procedures.
SABER© is a Copyright of Analogy Inc., PSPICE® is a registered trademark of MicroSim Corporation.
www.intersil.com or 321-724-7143 | Copyright © Intersil Corporation 2000