ITF86172SK8T Datasheet, PDF (1/12 Pages) Intersil Corporation – 10A, 30V, 0.016 Ohm, P-Channel, Logic Level, Power MOSFET

Data Sheet
ITF86172SK8T
January 2000 File Number 4809.1
[ /Title
(HUF7
6400S
K8)
/Sub-
ject
(60V,
0.072
Ohm,
4A, N-
Chan-
nel,
Logic
Level
UltraFE
T
Power
MOS-
FET)
/Author
()
/Key-
words
(Inter-
sil
Semi-
conduc-
tor, N-
Chan-
nel,
Logic
Level
UltraFE
T
Power
10A, 30V, 0.016 Ohm, P-Channel, Logic
Level, Power MOSFET
Packaging
SO8 (JEDEC MS-012AA)
BRANDING DASH
1
2
3
4
Symbol
SOURCE(1)
SOURCE(2)
5
DRAIN(8)
DRAIN(7)
SOURCE(3)
GATE(4)
DRAIN(6)
DRAIN(5)
Features
• Ultra Low On-Resistance
- r_DS(ON) = 0.016Ω, V_GS = −10V
- r_DS(ON) = 0.023Ω, V_GS = −4.5V
- r_DS(ON) = 0.026Ω, V_GS = −4V
• Gate to Source Protection Diode
• Simulation Models
- Temperature Compensated PSPICE™ and SABER
Electrical Models
- Spice and SABER Thermal Impedance Models
- www.intersil.com
• Peak Current vs Pulse Width Curve
• Transient Thermal Impedance Curve vs Board Mounting
Area
• Switching Time vs R_GS Curves
Ordering Information
PART NUMBER
PACKAGE
BRAND
ITF86172SK8T
SO8
86172
NOTE: When ordering, use the entire part number. ITF86172SK8T
is available only in tape and reel.
Absolute Maximum Ratings T_A = 25^oC, Unless Otherwise Specified
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_DSS
Drain to Gate Voltage (R_GS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_DGR
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_GS
Drain Current
Continuous
Continuous
(T_A=
(T_A=
25^oC,
25^oC,
V_GS
V_GS
=
=
10V) (Note 2) .
4.5V) (Note 2)
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I_D
I_D
Continuous (T_A= 100^oC, V_GS = 4.5V) (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_D
Continuous (T_A= 100^oC, V_GS = 4.0V) (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_D
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I_DM
Power Dissipation (Note 2)
Derate Above 25^oC . . . .
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P_D
...
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T_J, T_STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T_L
Package Body for 10s, See Tech brief TB370 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T_pkg
ITF86172SK8T
-30
-30
±20
10.0
8.0
5.0
5.0
Figure 4
2.5
20
-55 to 150
300
260
UNITS
V
V
V
A
A
A
A
W
mW/^oC
o_C
o_C
o_C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
1. T_J = 25^oC to 125^oC.
2. 50^oC/W measured using FR-4 board with 0.76 in² (490.3 mm²) copper pad at 10 second.
1
CAUTION: These devices are sensitive to electrostatic discharge. Follow proper ESD Handling Procedures.
PSPICE® is a registered trademark of MicroSim Corporation.
SABER© is a Copyright of Analogy Inc.http://www.intersil.com or 321-727-9207 | Copyright © Intersil Corporation 1999