ITF86110DK8T Datasheet, PDF (1/13 Pages) Intersil Corporation – 7.5A, 30V, 0.025 Ohm, Dual N-Channel, Logic Level, Power MOSFET

ITF86110DK8T
Data Sheet
January 2000 File Number 4807.2
[ /Title
(HUF7
6400S
K8)
/Sub-
ject
(60V,
0.072
Ohm,
4A, N-
Chan-
nel,
Logic
Level
UltraFE
T
Power
MOS-
FET)
/Author
()
/Key-
words
(Inter-
sil
Semi-
conduc-
tor, N-
Chan-
nel,
Logic
Level
UltraFE
T
Power
7.5A, 30V, 0.025 Ohm, Dual N-Channel,
Logic Level, Power MOSFET
Packaging
SO8 (JEDEC MS-012AA)
BRANDING DASH
1
2
3
4
Symbol
SOURCE1(1)
GATE1(2)
SOURCE2(3)
GATE2(4)
5
DRAIN1(8)
DRAIN1(7)
DRAIN2(6)
DRAIN2(5)
Features
• Ultra Low On-Resistance
- r_DS(ON) = 0.025Ω, V_GS = 10V
- r_DS(ON) = 0.034Ω, V_GS = 4.5V
- r_DS(ON) = 0.042Ω, V_GS = 4.0V
• Gate to Source Protection Diode
• Simulation Models
- Temperature Compensated PSPICE™ and SABER
Electrical Models
- Spice and SABER Thermal Impedance Models
- www.intersil.com
• Peak Current vs Pulse Width Curve
• Transient Thermal Impedance Curve vs Board Mounting
Area
• Switching Time vs R_GS Curves
Ordering Information
PART NUMBER
PACKAGE
BRAND
ITF86110DK8T
SO8
86110
NOTE: When ordering, use the entire part number. ITF86110DK8T
is available only in tape and reel.
Absolute Maximum Ratings T_A = 25^oC, Unless Otherwise Specified
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_DSS
Drain to Gate Voltage (R_GS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_DGR
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_GS
Drain Current
Continuous (T_A= 25^oC, V_GS = 10V) (Figure 2) (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . I_D
Continuous
Continuous
Continuous
(T_A=
(T_A=
(T_A=
211500^o_00CooCC, V,, _VVGGGSSS===4.445..V50VV) _{))(N((NNotooettee2)33)).}
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I_D
I_D
I_D
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I_DM
Power Dissipation (Note 2)
Derate Above 25^oC . . . .
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P_D
...
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T_J, T_STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T_L
Package Body for 10s, See Tech brief TB370 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T_pkg
ITF86110DK8T
30
30
±20
7.5
6.5
2.0
1.5
Figure 4
2.5
20
-55 to 150
300
260
UNITS
V
V
V
A
A
A
A
A
W
mW/^oC
o_C
o_C
o_C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
1. T_J = 25^oC to 125^oC.
2. 50^oC/W measured using FR-4 board with 0.14 in² (90.3 mm²) copper pad at 1 second.
3. 228^oC/W measured using FR-4 board with 0.006 in² (3.9 mm²) copper pad at 1000 second.
1
CAUTION: These devices are sensitive to electrostatic discharge. Follow proper ESD Handling Procedures.
PSPICE® is a registered trademark of MicroSim Corporation.
SABER© is a Copyright of Analogy Inc.http://www.intersil.com or 321-727-9207 | 1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 2000