ISL89166 Datasheet, PDF (1/13 Pages) Intersil Corporation – High Speed, Dual Channel, 6A, Power MOSFET Driver With Programmable Delays

High Speed, Dual Channel, 6A, Power MOSFET Driver
With Programmable Delays
ISL89166, ISL89167, ISL89168
The ISL89166, ISL89167, and ISL89168 are high-speed, 6A,
dual channel MOSFET drivers. These parts are similar to the
ISL89160, ISL89161, ISL89162 drivers but use the NC pins for
programming the rising edge time delays of the outputs used for
dead time control.
As an alternative to using external RC circuits for time delays, the
programmable delays on the RDTA and RDTB pins allows the
user to delay the rising edge of the respective outputs just by
connecting an appropriate resistor value between these pins and
ground. The accuracy and temperature characteristics of the
time delays are specified freeing the user of the need to select
appropriate external resistors and capacitors that traditionally
are applied to the logic inputs to delay the output edges.
At high switching frequencies, these MOSFET drivers use very
little internal bias currents. Separate, non-overlapping drive
circuits are used to drive each CMOS output FET to prevent
shoot-thru currents in the output stage.
The undervoltage lockout (UV) insures that driver outputs remain
off (low) during turn-on until V_DD is sufficiently high for correct
logic control. This prevents unexpected glitches when V_DD is
being turn-on or turn-off.
Features
• Dual output, 6A peak current (sink and source)
• Typical ON-resistance <1Ω
• Specified Miller plateau drive currents
• Very low thermal impedance (θ_JC = 3°C/W)
• Hysteretic logic inputs for high noise immunity
• Programmable output rising edge delays using only a resistor.
• ~ 20ns rise and fall time driving a 10nF load.
• Low operating bias currents
Applications
• Synchronous Rectifier (SR) Driver
• Switch mode power supplies
• Motor Drives, Class D amplifiers, UPS, Inverters
• Pulse Transformer Driver
• Clock/Line Driver
RDTA
1
INA ₂
GND
3
INB
4
EPAD
VDD
RDTB
8
7 ^OUTA
6
5 ^OUTB
4.7µF
FIGURE 1. TYPICAL APPLICATION
350
300
250
+125°C (WORST CASE)
200
150
+25°C (TYPICAL)
100
50
-40°C (WORST CASE)
0
0
5
10
15
20
RDT (2k to 20k)
FIGURE 2. PROGRAMMABLE TIME DELAYS
January 14, 2011
1
FN7720.0
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
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